DTA124XET1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA124XET1G
Código: 6L
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SC-75
Búsqueda de reemplazo de transistor bipolar DTA124XET1G
DTA124XET1G
Datasheet (PDF)
..1. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.1. Size:770K lrc
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
6.1. Size:55K motorola
pdta124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of
6.2. Size:54K motorola
pdta124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k
6.3. Size:55K philips
pdta124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of
6.4. Size:54K philips
pdta124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k
6.5. Size:83K nxp
pdta124xef pdta124xk pdta124xs.pdf
PDTA124X seriesPNP resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 08 3 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA124XE SOT416 SC-75 - PDTC124XEPDTA124XEF SOT490 SC-89 - PDTC124XEFPDTA124XK SOT346 SC-
6.6. Size:69K rohm
dta124xe-xua-xka 35 sot416 323 346.pdf
TransistorsDigital transistors (built-in resistors)DTA124XE / DTA124XUA / DTA124XKA /DTA124XSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
6.7. Size:686K rohm
dta124xe dta124xka.pdf
DTA124X seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC-50VIN IN IC(MAX.)-100mAGND GND R122kWDTA124XM DTA124XE R2(SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3OUT lFeaturesOUT 1) Built-In Biasing ResistorsIN IN 2) Built-in bias resistors enable the configura
6.8. Size:2070K rohm
dta124xefra dta124xkafra.pdf
DTA124X seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC-50VIC(MAX.)-100mA R122kDTA124XMFHA DTA124XEFRADTA124XM DTA124XER2 (SC-105AA) SOT-416(SC-75A)47k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors 2) Built-in bia
6.9. Size:93K diodes
ddta124xe.pdf
DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L
6.10. Size:122K chenmko
chdta124xegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA124XEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
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