DTA124XET1G datasheet, аналоги, основные параметры

Наименование производителя: DTA124XET1G

Маркировка: 6L

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.47

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SC-75

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DTA124XET1G даташит

 ..1. Size:222K  onsemi
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DTA124XET1G

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:770K  lrc
 ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf pdf_icon

DTA124XET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons

 0.2. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

DTA124XET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 6.1. Size:55K  motorola
 pdta124xe 3.pdf pdf_icon

DTA124XET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 Nov 25 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design Reduces number of

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Другие транзисторы: DTA124XM3, DTA123JKA, DTA123JSA, DTA124XKAFRA, DTA123YKA, DTA123YSA, DTA123YUA, DTA124ECA, 8550, DTA124EKA, DTA124ESA, DTA124EUA, DTA124GKA, DTA124GSA, DTA124XEFRA, DTA124TKA, DTA124TSA