2N3507L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3507L  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO5

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2N3507L datasheet

 8.1. Size:90K  microsemi
2n3507a.pdf pdf_icon

2N3507L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P

 8.2. Size:90K  microsemi
2n3507al.pdf pdf_icon

2N3507L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P

 8.3. Size:46K  semicoa
2n3507.pdf pdf_icon

2N3507L

Data Sheet No. 2N3507 Generic Part Number Type 2N3507 2N3507 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are TO-39 per MIL-PRF-19500/3

Otros transistores... 2N3502, 2N3503, 2N3504, 2N3505, 2N3506, 2N3506L, 2N3506S, 2N3507, D667, 2N3507S, 2N3507X, 2N3508, 2N3509, 2N350A, 2N351, 2N3510, 2N3511