DTC123ECA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC123ECA
Código: 22
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: SOT-23
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DTC123ECA datasheet
..1. Size:145K jiangsu
dtc123eca.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTC123EM/DTC123EE/DTC123EUA DTC123EKA /DTC123ECA/DTC123ESA Equivalent Circuit DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consis
0.1. Size:99K diodes
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7.1. Size:55K motorola
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.2. Size:182K philips
pdtc123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.3. Size:55K philips
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.4. Size:139K nxp
pdtc123eef pdtc123ek pdtc123es.pdf
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7.5. Size:68K rohm
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7.6. Size:162K rohm
dtc123e-series.pdf
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7.7. Size:685K rohm
dtc123ee.pdf
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7.8. Size:76K rohm
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7.9. Size:2061K rohm
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7.10. Size:178K diodes
ddtc123eka.pdf
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7.12. Size:89K diodes
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7.13. Size:352K diodes
ddtc123ee.pdf
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7.21. Size:545K lrc
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7.23. Size:123K chenmko
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7.24. Size:130K chenmko
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