DTC123ECA Datasheet. Specs and Replacement
Type Designator: DTC123ECA
SMD Transistor Code: 22
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT-23
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DTC123ECA datasheet
..1. Size:145K jiangsu
dtc123eca.pdf 
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DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Types Available (DDTA) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia... See More ⇒
7.1. Size:55K motorola
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co... See More ⇒
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pdtc123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒
7.3. Size:55K philips
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co... See More ⇒
7.4. Size:139K nxp
pdtc123eef pdtc123ek pdtc123es.pdf
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7.5. Size:68K rohm
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7.6. Size:162K rohm
dtc123e-series.pdf
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7.7. Size:685K rohm
dtc123ee.pdf
DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2kW DTC123EM DTC123EE R2 (SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3 OUT OUT lFeatures IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW. IN GND GND 2) Built-in bias resi... See More ⇒
7.8. Size:76K rohm
dtc123eka dtc123esa dtc123eua.pdf
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7.9. Size:2061K rohm
dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdf
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ddtc123eka.pdf
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dtc123e.pdf
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Detailed specifications: DTA144ECA, DTC123EET1G, DTA144EKA, DTA144ESA, DTA144EUA, DTA144GKA, DTC123EEFRA, DTA144TCA, BD333, DTA144TKA, DTA144TSA, DTA144TUA, DTA144VKA, DTA144VSA, DTA144VUA, DTC115TS3, DTA144WKA
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