DTB114EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTB114EK

Código: F14

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 56

Encapsulados: SC59 SOT346

 Búsqueda de reemplazo de DTB114EK

- Selecciónⓘ de transistores por parámetros

 

DTB114EK datasheet

 ..1. Size:61K  rohm
dtb114ek dtb114es.pdf pdf_icon

DTB114EK

Transistors Digital transistors (built-in resistors) DTB114EK / DTB114ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They

 ..2. Size:356K  rohm
dtb114ek.pdf pdf_icon

DTB114EK

DTB114EK Datasheet PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline SMT3 Parameter Value OUT VCC 50V IN IC(MAX.) 500mA GND R1 10k DTB114EK R2 SOT 346 (SC 59) 10k Features Inner circuit 1) Built-In Biasing Resistors, R1 = R2 = 10k . OUT R1 IN 2) Built-in bias resistors enable the configuration of R2 an inverte

 0.1. Size:104K  chenmko
chdtb114ekgp.pdf pdf_icon

DTB114EK

CHENMKO ENTERPRISE CO.,LTD CHDTB114EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

 7.1. Size:26K  motorola
pdtb114et p09 sot23.pdf pdf_icon

DTB114EK

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi

Otros transistores... DTA144VSA, DTA144VUA, DTC115TS3, DTA144WKA, DTA144WSA, DTA144WUA, DTB113EK, DTB113ES, 2N3055, DTB114ES, DTB123EK, DTB123ES, DTB143EC, DTB143EK, DTB143ES, DTC113ZKA, DTC113ZSA