DTB114EK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB114EK
Código: F14
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SC59 SOT346
Búsqueda de reemplazo de DTB114EK
DTB114EK Datasheet (PDF)
dtb114ek dtb114es.pdf

TransistorsDigital transistors (built-in resistors)DTB114EK / DTB114ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing of theinput. They
dtb114ek.pdf

DTB114EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline SMT3Parameter ValueOUTVCC50VINIC(MAX.)500mAGNDR110kDTB114EKR2 SOT346(SC59)10kFeatures Inner circuit1) Built-In Biasing Resistors, R1 = R2 = 10k.OUTR1IN2) Built-in bias resistors enable the configuration ofR2 an inverte
chdtb114ekgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
pdtb114et p09 sot23.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
Otros transistores... DTA144VSA , DTA144VUA , DTC115TS3 , DTA144WKA , DTA144WSA , DTA144WUA , DTB113EK , DTB113ES , C5198 , DTB114ES , DTB123EK , DTB123ES , DTB143EC , DTB143EK , DTB143ES , DTC113ZKA , DTC113ZSA .
History: GES6004 | MRF1090MB



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