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DTB123EK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTB123EK
   Código: F12
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 39
   Paquete / Cubierta: SC59 SOT346
 

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DTB123EK Datasheet (PDF)

 ..1. Size:136K  rohm
dtb123ek.pdf pdf_icon

DTB123EK

-500mA / -50V Digital transistors (with built-in resistors) DTB123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB123EK2.9 1.1 Features 0.4 0.81)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistor

 ..2. Size:59K  rohm
dtb123ek dtb123es.pdf pdf_icon

DTB123EK

DTB123EK / DTB123ES Transistors Digital transistors (built-in resistors) DTB123EK / DTB123ES External dimensions (Unit : mm) Features 1) Built-in bias resistors enable the 2.90.2DTB123EK1.1+0.2configuration of an inverter circuit 1.90.2 -0.10.80.1without connecting external input 0.95 0.95resistors (see equivalent circuit). (1) (2)0 to 0.12) The bias re

 0.1. Size:104K  chenmko
chdtb123ekgp.pdf pdf_icon

DTB123EK

CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.1. Size:118K  nxp
pdtb123e.pdf pdf_icon

DTB123EK

PDTB123E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB123EK SOT346 SC-59A TO-236 PDTD123EKPDTB123ES[1] SOT54 SC-43A TO-92

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: SRC1219 | 2SC2502 | MPSU31 | 2SC268B | H8550S

 

 
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