DTB123ES
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB123ES
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 39
Paquete / Cubierta:
SC72
Búsqueda de reemplazo de transistor bipolar DTB123ES
DTB123ES
Datasheet (PDF)
..1. Size:59K rohm
dtb123ek dtb123es.pdf
DTB123EK / DTB123ES Transistors Digital transistors (built-in resistors) DTB123EK / DTB123ES External dimensions (Unit : mm) Features 1) Built-in bias resistors enable the 2.90.2DTB123EK1.1+0.2configuration of an inverter circuit 1.90.2 -0.10.80.1without connecting external input 0.95 0.95resistors (see equivalent circuit). (1) (2)0 to 0.12) The bias re
7.1. Size:118K nxp
pdtb123e.pdf
PDTB123E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB123EK SOT346 SC-59A TO-236 PDTD123EKPDTB123ES[1] SOT54 SC-43A TO-92
7.2. Size:136K rohm
dtb123ek.pdf
-500mA / -50V Digital transistors (with built-in resistors) DTB123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB123EK2.9 1.1 Features 0.4 0.81)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistor
7.3. Size:163K diodes
ddtb123ec.pdf
DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0
7.4. Size:165K diodes
ddtb123eu.pdf
DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom
7.5. Size:287K lrc
ldtb123eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis
7.6. Size:331K kexin
dtb123e.pdf
SMD Type TransistorsDigital TransistorsDTB123E (KDTB123E)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.
7.7. Size:104K chenmko
chdtb123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
Otros transistores... 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, BD777
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.