Справочник транзисторов. DTB123ES

 

Биполярный транзистор DTB123ES - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTB123ES
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 2.2 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Статический коэффициент передачи тока (hfe): 39
   Корпус транзистора: SC72

 Аналоги (замена) для DTB123ES

 

 

DTB123ES Datasheet (PDF)

 ..1. Size:59K  rohm
dtb123ek dtb123es.pdf

DTB123ES
DTB123ES

DTB123EK / DTB123ES Transistors Digital transistors (built-in resistors) DTB123EK / DTB123ES External dimensions (Unit : mm) Features 1) Built-in bias resistors enable the 2.90.2DTB123EK1.1+0.2configuration of an inverter circuit 1.90.2 -0.10.80.1without connecting external input 0.95 0.95resistors (see equivalent circuit). (1) (2)0 to 0.12) The bias re

 7.1. Size:118K  nxp
pdtb123e.pdf

DTB123ES
DTB123ES

PDTB123E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB123EK SOT346 SC-59A TO-236 PDTD123EKPDTB123ES[1] SOT54 SC-43A TO-92

 7.2. Size:136K  rohm
dtb123ek.pdf

DTB123ES
DTB123ES

-500mA / -50V Digital transistors (with built-in resistors) DTB123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB123EK2.9 1.1 Features 0.4 0.81)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistor

 7.3. Size:163K  diodes
ddtb123ec.pdf

DTB123ES
DTB123ES

DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0

 7.4. Size:165K  diodes
ddtb123eu.pdf

DTB123ES
DTB123ES

DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom

 7.5. Size:287K  lrc
ldtb123eet1g.pdf

DTB123ES
DTB123ES

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis

 7.6. Size:331K  kexin
dtb123e.pdf

DTB123ES

SMD Type TransistorsDigital TransistorsDTB123E (KDTB123E)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.

 7.7. Size:104K  chenmko
chdtb123ekgp.pdf

DTB123ES
DTB123ES

CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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History: LMUN2241LT1G | 2DC2412R

 

 
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