DTC114ECA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC114ECA
Código: 24
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: SOT23
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DTC114ECA datasheet
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Spec. No. C351C3 Issued Date 2010.12.31 CYStech Electronics Corp. Revised Date 2011.08.24 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
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CHENMKO ENTERPRISE CO.,LTD CHDTC114EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
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CHENMKO ENTERPRISE CO.,LTD CHDTC114EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
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CHENMKO ENTERPRISE CO.,LTD CHDTC114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (/SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
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DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Collector Features (Output) With built-in bias resistors R1 Base Simplify circuit design (Input) Reduce a quantity of parts and R2 manufacturing process Emitter (Common) Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Input Voltage VI - 10 to +
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RoHS COMPLIANT DTC114EUA Digital Transistors (Built-in Resistors) Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT
Otros transistores... DTB123EK, DTB123ES, DTB143EC, DTB143EK, DTB143ES, DTC113ZKA, DTC113ZSA, DTC113ZUA, BD140, DTC115TN3, DTC114EK, DTC114EKA, DTC114ESA, DTC114EUA, DTC114GKA, DTC114GSA, DTC114GUA
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