DTC114ECA - описание и поиск аналогов

DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ

DTC114ECA NPN DIGITAL TRANSISTOR 3 P b Lead(Pb)-Free 1 2 SOT-23 Features (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Ou

FM120-M WILLAS THRU DTC114ECA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-23 Features Low profile surface mounted application in order to

DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Types Available (DDTA) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia

Spec. No. C351C3 Issued Date 2010.12.31 CYStech Electronics Corp. Revised Date 2011.08.24 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Product data sheet 2004 Aug 05 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1

Transistors DTC114EUB 100mA / 50V Digital transistors (with built-in resistors) DTC114EUB Applications Dimensions (Unit mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t

DTC114E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114EM DTC114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

100mA / 50V Digital transistors (with built-in resistors) DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isol

DTC114E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114EM DTC114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

Transistors Digital transistors (built-in resistors) DTC114EE / DTC114EUA / DTC114EKA DTC114ECA / DTC114ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow n

DDTC114ELP PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sens

DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data G G

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

DTC114EXV3T1 Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis

DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis

DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba

DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis

UNISONIC TECHNOLOGIES CO., LTD DTC114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

DTC114EE/DTC114EUA/DTC114ECA DTC114EKA/DTC114ESA Digital Transistor(NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost comp

DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead(Pb)-Free COLLECTOR 1 2 3 R1 1 R2 BASE SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage 50 V VCEO VCBO V Collector-Base Voltage 50 mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit To

DTC114EM Series Bias Resistor Transistor NPN Silicon 3 P b Lead(Pb)-Free COLLECTOR 1 3 2 R1 1 R2 BASE SOT-723 2 EMITTER Maximum Ratings (TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO V 50 VCEO Collector-Emitter Voltage 50 V mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device

DTC114EUA NPN DIGITAL TRANSISTOR 3 P b Lead(Pb)-Free 1 2 Features SOT-323(SC-70) (1)GND (2)OUT (3)IN without connecting external input resistors(see equivalent circuit). to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO

DTC114ESA NPN DIGITAL TRANSISTOR P b Lead(Pb)-Free Features 1 2 3 without connecting external input resistors(see equivalent circuit). (1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Output curre

FM120-M WILLAS THRU DTC114EE NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board spa

FM120-M WILLAS THRU DTC114EUA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Features Low profile surface mounted application in order to optimi

Spec. No. C351S3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2010.11.10 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

Spec. No. C351B3 Issued Date 2003.08.20 CYStech Electronics Corp. Revised Date 2008.04.28 Page No. 1/5 NPN Digital Transistors (Built-in Resistors) DTC114EB3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

Spec. No. C351Y3 Issued Date 2011.08.24 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EY3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete

Spec. No. C351N3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2012.01.05 Page No. 1/7 NPN Digital Transistors (Built-in Resistors) DTC114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

Spec. No. C351A3 Issued Date 2003.08.20 CYStech Electronics Corp. Revised Date 2003.09.29 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons

SEMICONDUCTOR DTC114E TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the

SMD Type Transistors Digital Transistors DTC114EE (KDTC114EE) SOT-523 U nit m m Features +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 Repetitive peak off-state voltages 50V +0.05 0.2 -0.05 0.1+0.01 -0.01 The bias resistors consist of thinfilm resistors with complete isolation 2 1 to allow negative biasing of the input. Only the on/off conditions need to 3 +0.25 be set fo

CHENMKO ENTERPRISE CO.,LTD CHDTC114EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

CHENMKO ENTERPRISE CO.,LTD CHDTC114EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

CHENMKO ENTERPRISE CO.,LTD CHDTC114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (/SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil

CHENMKO ENTERPRISE CO.,LTD CHDTC114EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Collector Features (Output) With built-in bias resistors R1 Base Simplify circuit design (Input) Reduce a quantity of parts and R2 manufacturing process Emitter (Common) Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Input Voltage VI - 10 to +

RoHS COMPLIANT DTC114EUA Digital Transistors (Built-in Resistors) Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT