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DTC123ESA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC123ESA
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SC72

 Búsqueda de reemplazo de transistor bipolar DTC123ESA

 

DTC123ESA Datasheet (PDF)

 ..1. Size:76K  rohm
dtc123eka dtc123esa dtc123eua.pdf pdf_icon

DTC123ESA

DTC123EM / DTC123EE / DTC123EUA Transistors DTC123EKA / DTC123ESA Digital transistors (built-in resistors) DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA Equivalent circuit Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input OUT R1 resistors (see equivalent circuit). IN 2) The bias resistors consist of thin-f

 6.1. Size:139K  nxp
pdtc123eef pdtc123ek pdtc123es.pdf pdf_icon

DTC123ESA

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

 7.1. Size:55K  motorola
pdtc123et 3.pdf pdf_icon

DTC123ESA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 7.2. Size:182K  philips
pdtc123e series.pdf pdf_icon

DTC123ESA

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

Otros transistores... DTC115EUA , DTC115GKA , DTC115GUA , DTC115TKA , DTC115TSA , DTC115TUA , DTC144EY3 , DTC123EKA , 2SD2499 , DTC123EUA , DTC144EUAFRA , DTC123JKA , DTC123JSA , DTC123JUA , DTC144ES3 , DTC123YKA , DTC123YSA .

History: KRA766U | TS7990 | KT6108A | KT611AM | KS6111 | KT626D | KRC827F

 

 
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