DTD113EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTD113EK

Código: F21

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 33

Encapsulados: SC59 SOT346

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DTD113EK datasheet

 ..1. Size:136K  rohm
dtd113ek.pdf pdf_icon

DTD113EK

500mA / 50V Digital transistors (with built-in resistors) DTD113EK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD113EK 0.4 0.8 Features ( ) 3 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1) 2)The bias resistors consist of thin-f

 ..2. Size:60K  rohm
dtd113es dtd113ek.pdf pdf_icon

DTD113EK

Transistors Digital transistors (built-in resistors) DTD113EK / DTD113ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing of the input. They

 0.1. Size:123K  nxp
pdtd113ek pdtd113es.pdf pdf_icon

DTD113EK

PDTD113E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD113EK SOT346 SC-59A TO-236 PDTB113EK PDTD113ES[1] SOT54 SC-43A TO-92 PDT

 0.2. Size:113K  chenmko
chdtd113ekgp.pdf pdf_icon

DTD113EK

CHENMKO ENTERPRISE CO.,LTD CHDTD113EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

Otros transistores... EMB4, EMB4FHA, DTC343TK, EMB3, DTC343TS, EMB2FHA, DTC363EK, DTC363EU, 13003, DTD113ES, DTD114EK, DTD114ES, DTD123EK, DTD123ES, DTD143EC, DTD143EK, DTD143ES