DTD114EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD114EK
Código: F24
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Ganancia de corriente contínua (hFE): 56
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DTD114EK datasheet
dtd114es dtd114ek.pdf
DTD114EK / DTD114ES Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD114EK / DTD114ES Applications External dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 (3) Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (2) (1) (see equivalent circui
dtd114ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD114EK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 Features (3) 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1) 2)The bias resistors consist of thin-film
chdtd114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo
Otros transistores... DTC343TK, EMB3, DTC343TS, EMB2FHA, DTC363EK, DTC363EU, DTD113EK, DTD113ES, 2SC2073, DTD114ES, DTD123EK, DTD123ES, DTD143EC, DTD143EK, DTD143ES, DTD163TA, DTD163TF
History: DTD123EK
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