DTD123EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTD123EK

Código: F22

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 39

Encapsulados: SC59 SOT346

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DTD123EK datasheet

 ..1. Size:58K  rohm
dtd123ek dtd123es.pdf pdf_icon

DTD123EK

Transistors Digital transistors (built-in resistors) DTD123EK / DTD123ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing of the input. They

 ..2. Size:136K  rohm
dtd123ek.pdf pdf_icon

DTD123EK

500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD123EK 2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8 circuit without connecting external input resistors (see (3) equivalent circuit). 2)The bias resistors consist of thin-film resistors

 0.1. Size:123K  nxp
pdtd123ek pdtd123es.pdf pdf_icon

DTD123EK

PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123EK SOT346 SC-59A TO-236 PDTB123EK PDTD123ES[1] SOT54 SC-43A TO-92

 0.2. Size:98K  chenmko
chdtd123ekgp.pdf pdf_icon

DTD123EK

CHENMKO ENTERPRISE CO.,LTD CHDTD123EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

Otros transistores... DTC343TS, EMB2FHA, DTC363EK, DTC363EU, DTD113EK, DTD113ES, DTD114EK, DTD114ES, BC327, DTD123ES, DTD143EC, DTD143EK, DTD143ES, DTD163TA, DTD163TF, DTD163TK, DTD163TL