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2N3585 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3585
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO66

 Búsqueda de reemplazo de transistor bipolar 2N3585

 

2N3585 Datasheet (PDF)

 ..1. Size:430K  central
2n3583 2n3584 2n3585.pdf

2N3585
2N3585

2N35832N3584www.centralsemi.com2N3585DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications.MARKING: FULL PART NUMBERTO-66 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITSCollector-Base Voltage VCBO 250 375 500 VCollector-Emitt

 ..2. Size:224K  bocasemi
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf

2N3585
2N3585

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com

 ..3. Size:153K  inchange semiconductor
2n3585.pdf

2N3585
2N3585

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection

 0.1. Size:160K  comset
2n3583-2n3584-2n3585.pdf

2N3585
2N3585

NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N3583 250VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 4402N3583 175VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3

 9.2. Size:130K  inchange semiconductor
2n3584.pdf

2N3585
2N3585

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection

 9.3. Size:181K  inchange semiconductor
2n3583.pdf

2N3585
2N3585

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switch

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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