2N3586
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3586
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 45
V
Tensión emisor-base (Veb): 45
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1
MHz
Capacitancia de salida (Cc): 18
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO77
Búsqueda de reemplazo de transistor bipolar 2N3586
2N3586
Datasheet (PDF)
9.2. Size:430K central
2n3583 2n3584 2n3585.pdf
2N35832N3584www.centralsemi.com2N3585DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications.MARKING: FULL PART NUMBERTO-66 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITSCollector-Base Voltage VCBO 250 375 500 VCollector-Emitt
9.3. Size:160K comset
2n3583-2n3584-2n3585.pdf
NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N3583 250VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 4402N3583 175VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3
9.5. Size:130K inchange semiconductor
2n3584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection
9.6. Size:181K inchange semiconductor
2n3583.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switch
9.7. Size:153K inchange semiconductor
2n3585.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection
Otros transistores... 2N358
, 2N3580
, 2N3581
, 2N3582
, 2N3583
, 2N3584
, 2N3584X
, 2N3585
, 8550
, 2N3587
, 2N3588
, 2N3589
, 2N358A
, 2N359
, 2N3590
, 2N3591
, 2N3592
.