2N3588 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3588
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 25 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO72
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2N3588 Datasheet (PDF)
2n3583 2n3584 2n3585.pdf

2N35832N3584www.centralsemi.com2N3585DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications.MARKING: FULL PART NUMBERTO-66 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N3583 2N3584 2N3585 UNITSCollector-Base Voltage VCBO 250 375 500 VCollector-Emitt
2n3583-2n3584-2n3585.pdf

NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N3583 250VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 4402N3583 175VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3
2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com
Otros transistores... 2N3581 , 2N3582 , 2N3583 , 2N3584 , 2N3584X , 2N3585 , 2N3586 , 2N3587 , 2SD669A , 2N3589 , 2N358A , 2N359 , 2N3590 , 2N3591 , 2N3592 , 2N3593 , 2N3594 .
History: 2N6287 | ECG2411 | 2SA733M | BD355C | DTC114WE | 2N2195A | CL066D
History: 2N6287 | ECG2411 | 2SA733M | BD355C | DTC114WE | 2N2195A | CL066D



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