ET10015 Todos los transistores

 

ET10015 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ET10015

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 400 V

Corriente del colector DC máxima (Ic): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO3

 Búsqueda de reemplazo de ET10015

- Selecciónⓘ de transistores por parámetros

 

ET10015 datasheet

 9.1. Size:358K  1
fdms86150et100.pdf pdf_icon

ET10015

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:316K  fairchild semi
fdms86150et100.pdf pdf_icon

ET10015

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

 9.3. Size:293K  fairchild semi
fdmc86160et100.pdf pdf_icon

ET10015

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

Otros transistores... ESM855 , ESM856 , ESM857 , ESM858 , ESM870 , ESM871 , ESM952 , ESM952A , TIP31 , ET10016 , ET10020 , ET10021 , ET132-09 , ET1550 , ET1551 , ET189 , ET190 .

History: 2N743-46

 

 

 


History: 2N743-46

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

irf3205 equivalent | ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125

 

 

↑ Back to Top
.