ET10015 - описание и поиск аналогов

 

ET10015. Аналоги и основные параметры

Наименование производителя: ET10015

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 250 W

Макcимально допустимое напряжение коллектор-база (Ucb): 400 V

Макcимальный постоянный ток коллектора (Ic): 50 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Корпус транзистора: TO3

 Аналоги (замена) для ET10015

- подборⓘ биполярного транзистора по параметрам

 

ET10015 даташит

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fdms86150et100.pdfpdf_icon

ET10015

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:316K  fairchild semi
fdms86150et100.pdfpdf_icon

ET10015

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

 9.3. Size:293K  fairchild semi
fdmc86160et100.pdfpdf_icon

ET10015

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

Другие транзисторы: ESM855, ESM856, ESM857, ESM858, ESM870, ESM871, ESM952, ESM952A, TIP31, ET10016, ET10020, ET10021, ET132-09, ET1550, ET1551, ET189, ET190

 

 

 

 

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