ET10016 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ET10016
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 500 V
Corriente del colector DC máxima (Ic): 50 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Encapsulados: TO3
Búsqueda de reemplazo de ET10016
- Selecciónⓘ de transistores por parámetros
ET10016 datasheet
fdms86150et100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86150et100.pdf
January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p
fdmc86160et100.pdf
January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,
Otros transistores... ESM856 , ESM857 , ESM858 , ESM870 , ESM871 , ESM952 , ESM952A , ET10015 , TIP127 , ET10020 , ET10021 , ET132-09 , ET1550 , ET1551 , ET189 , ET190 , ET191 .
History: 2SC3403
History: 2SC3403
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