ET10016 PDF and Equivalents Search

 

ET10016 Specs and Replacement

Type Designator: ET10016

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Noise Figure, dB: -

Package: TO3

 ET10016 Substitution

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ET10016 datasheet

 9.1. Size:358K  1

fdms86150et100.pdf pdf_icon

ET10016

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.2. Size:316K  fairchild semi

fdms86150et100.pdf pdf_icon

ET10016

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p... See More ⇒

 9.3. Size:293K  fairchild semi

fdmc86160et100.pdf pdf_icon

ET10016

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,... See More ⇒

Detailed specifications: ESM856 , ESM857 , ESM858 , ESM870 , ESM871 , ESM952 , ESM952A , ET10015 , TIP127 , ET10020 , ET10021 , ET132-09 , ET1550 , ET1551 , ET189 , ET190 , ET191 .

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