ET10016 PDF Specs and Replacement
Type Designator: ET10016
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Noise Figure, dB: -
Package: TO3
ET10016 Substitution
ET10016 PDF detailed specifications
fdms86150et100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdms86150et100.pdf
January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p... See More ⇒
fdmc86160et100.pdf
January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,... See More ⇒
Detailed specifications: ESM856 , ESM857 , ESM858 , ESM870 , ESM871 , ESM952 , ESM952A , ET10015 , TIP127 , ET10020 , ET10021 , ET132-09 , ET1550 , ET1551 , ET189 , ET190 , ET191 .
History: 2N1378
Keywords - ET10016 pdf specs
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History: 2N1378
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