F101 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F101
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO53
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F101 datasheet
ptf10149.pdf
PTF 10149 70 Watts, 921 960 MHz GOLDMOS Field Effect Transistor Description INTERNALLY MATCHED The PTF 10149 is an internally matched 70 watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts 960 MHz. It operates with 50% efficiency and 16 dB typical gain. - Output Power = 70 Watts Nitride surface passivation and
mrf1015m.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum
mrf1015ma mrf1015mb.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum
mrf10120.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10120/D The RF Line Microwave Long Pulse MRF10120 Power Transistor Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak 120 W (PEAK), 960 1215 MHz Gain = 8.0 dB Min., 9.2 dB (Typ)
mrf10150.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10150/D The RF Line Microwave Pulse MRF10150 Power Transistor . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak 150 W (PEAK) Gain = 9.5 dB Min, 10.0 dB (Typ) 1025 1150 MHz MIC
irf1010ns.pdf
PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Fully Avalanche Rated G Description Advanced HEXFET Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low
irf1018epbf irf1018eslpbf irf1018espbf.pdf
PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l
irf1010nspbf irf1010nlpbf.pdf
PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t
irf1010n.pdf
PD - 91278 IRF1010N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 11m G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan
auirf1010ezstrl.pdf
PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)
irf1010es.pdf
PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175 C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi
irf1010npbf.pdf
PD - 94966A IRF1010NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 11m l Fast Switching G l Fully Avalanche Rated ID = 85A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
irf1010nlpbf irf1010nspbf.pdf
PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t
irf1010espbf irf1010elpbf.pdf
PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro
irf1010epbf.pdf
PD - 94965B IRF1010EPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 84A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
irf1010zlpbf irf1010zpbf irf1010zspbf.pdf
PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extr
irf1010z.pdf
PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 7.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest
irf1010elpbf irf1010espbf.pdf
PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech
irf1010e.pdf
PD - 9.1670B IRF1010E HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi
irf1010esl.pdf
PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175 C Operating Temperature RDS(on) = 0.012 G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely
irf1018epbf irf1018espbf irf1018eslpbf.pdf
PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech
auirf1010zstrl.pdf
PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S
mf1011b900y 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor 1997 Feb 18 Product specification Supersedes data of December 1994 Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25 C in a common-base class C Suitable for short and medium narrowband amplifier. pulse ap
bf1012.pdf
BF 1012 Silicon N-Channel MOSFET Tetrode For low-noise, gain-controlled input stages up to 1GHz Operating voltage 12V Integrated bias network ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 1012 MYs Q62702-F1487 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit
bf1012s.pdf
BF 1012S Silicon N-Channel MOSFET Tetrode ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 1012S NYs Q62702-F1627 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 16 V Continuos drain current ID 25 mA Gate 1/gate 2 peak source current IG1/2SM 10 G
auirf1010ez auirf1010ezs auirf1010ezl.pdf
AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175 C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q
auirf1010z auirf1010zs auirf1010zl.pdf
AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive
auirf1018es.pdf
AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo
auirf1018e.pdf
International Rectifier Product Detail Page Page 1 of 2 Part Se AUIRF1018E Part Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Description Support Docs N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact
uf1010e.pdf
UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 1 1 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1 features such as low RDS(ON), fast switching, and low gate charge. Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1
mrf10120.pdf
MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 960 1215MHz Product Image Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test
mrf10150.pdf
MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa
ssf1016d.pdf
SSF1016D Feathers ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016D is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf1010.pdf
SSF1010 Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf1010a.pdf
SSF1010A Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf1016a.pdf
SSF1016A Main Product Characteristics VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf1016.pdf
SSF1016 Feathers ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
irf1010a irf1010h.pdf
RoHS IRF1010 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (84A, 60Volts) DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability D D of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient G
mrf1015mb.pdf
HG RF POWER TRANSISTOR MRF1015MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1
mrf1015ma.pdf
MRF1015MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MICROWAVE POWER 100% Tested for Load Mismatch at All
irf1010zs.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ZS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU
irf1010ns.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU
irf1010n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010N IIRF1010N FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
irf1010ezs.pdf
Isc N-Channel MOSFET Transistor IRF1010EZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
irf1010es.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ES FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU
irf1010e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010E IIRF1010E FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
irf1010ez.pdf
isc N-Channel MOSFET Transistor IRF1010EZ IIRF1010EZ FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
irf1018e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1018E IIRF1018E FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
irf1018es.pdf
Isc N-Channel MOSFET Transistor IRF1018ES FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
Otros transistores... EW58-1 , EW58-2 , EW59 , EW69 , EW721 , EW722 , EW723 , EWQ282 , 2SC945 , F102 , F103 , F104 , F105 , F106 , F107 , F108 , F109 .
History: HM882
History: HM882
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