F101 - описание и поиск аналогов

PTF 10149 70 Watts, 921 960 MHz GOLDMOS Field Effect Transistor Description INTERNALLY MATCHED The PTF 10149 is an internally matched 70 watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts 960 MHz. It operates with 50% efficiency and 16 dB typical gain. - Output Power = 70 Watts Nitride surface passivation and

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10120/D The RF Line Microwave Long Pulse MRF10120 Power Transistor Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak 120 W (PEAK), 960 1215 MHz Gain = 8.0 dB Min., 9.2 dB (Typ)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10150/D The RF Line Microwave Pulse MRF10150 Power Transistor . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak 150 W (PEAK) Gain = 9.5 dB Min, 10.0 dB (Typ) 1025 1150 MHz MIC

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Fully Avalanche Rated G Description Advanced HEXFET Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

PD - 91278 IRF1010N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 11m G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175 C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi

PD - 94966A IRF1010NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 11m l Fast Switching G l Fully Avalanche Rated ID = 85A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro

PD - 94965B IRF1010EPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 84A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extr

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 7.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech

PD - 9.1670B IRF1010E HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175 C Operating Temperature RDS(on) = 0.012 G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S

DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor 1997 Feb 18 Product specification Supersedes data of December 1994 Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25 C in a common-base class C Suitable for short and medium narrowband amplifier. pulse ap

BF 1012 Silicon N-Channel MOSFET Tetrode For low-noise, gain-controlled input stages up to 1GHz Operating voltage 12V Integrated bias network ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 1012 MYs Q62702-F1487 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit

BF 1012S Silicon N-Channel MOSFET Tetrode ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 1012S NYs Q62702-F1627 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 16 V Continuos drain current ID 25 mA Gate 1/gate 2 peak source current IG1/2SM 10 G

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175 C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

International Rectifier Product Detail Page Page 1 of 2 Part Se AUIRF1018E Part Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Description Support Docs N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 1 1 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1 features such as low RDS(ON), fast switching, and low gate charge. Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 960 1215MHz Product Image Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

SSF1016D Feathers ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016D is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

SSF1010 Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

SSF1010A Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

SSF1016A Main Product Characteristics VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

SSF1016 Feathers ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

RoHS IRF1010 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (84A, 60Volts) DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability D D of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient G

HG RF POWER TRANSISTOR MRF1015MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1

MRF1015MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MICROWAVE POWER 100% Tested for Load Mismatch at All

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ZS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010N IIRF1010N FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF1010EZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ES FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010E IIRF1010E FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRF1010EZ IIRF1010EZ FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1018E IIRF1018E FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF1018ES FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol