Справочник транзисторов. F101

 

Биполярный транзистор F101 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: F101
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 85 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO53

 Аналоги (замена) для F101

 

 

F101 Datasheet (PDF)

 0.1. Size:215K  1
ptf10149.pdf

F101
F101

PTF 1014970 Watts, 921960 MHzGOLDMOS Field Effect TransistorDescription INTERNALLY MATCHEDThe PTF 10149 is an internally matched 70watt GOLDMOS FETintended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts960 MHz. It operates with 50% efficiency and 16 dB typical gain.- Output Power = 70 WattsNitride surface passivation and

 0.2. Size:110K  motorola
mrf1015m.pdf

F101
F101

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

 0.3. Size:110K  motorola
mrf1015ma mrf1015mb.pdf

F101
F101

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

 0.4. Size:98K  motorola
mrf10120.pdf

F101
F101

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10120/DThe RF LineMicrowave Long PulseMRF10120Power TransistorDesigned for 9601215 MHz long pulse common base amplifier applicationssuch as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 VdcOutput Power = 120 Watts Peak120 W (PEAK), 9601215 MHzGain = 8.0 dB Min., 9.2 dB (Typ)

 0.5. Size:90K  motorola
mrf10150.pdf

F101
F101

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10150/DThe RF LineMicrowave PulseMRF10150Power Transistor. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 150 Watts Peak150 W (PEAK)Gain = 9.5 dB Min, 10.0 dB (Typ)10251150 MHzMIC

 0.6. Size:146K  international rectifier
irf1010ns.pdf

F101
F101

PD - 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

 0.7. Size:429K  international rectifier
irf1018epbf irf1018eslpbf irf1018espbf.pdf

F101
F101

PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl

 0.8. Size:211K  international rectifier
irf1010n.pdf

F101
F101

PD - 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 0.9. Size:375K  international rectifier
auirf1010ezstrl.pdf

F101
F101

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

 0.10. Size:123K  international rectifier
irf1010es.pdf

F101
F101

PD - 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachi

 0.11. Size:225K  international rectifier
irf1010npbf.pdf

F101
F101

PD - 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

 0.12. Size:292K  international rectifier
irf1010nlpbf irf1010nspbf.pdf

F101
F101

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.13. Size:241K  international rectifier
irf1010epbf.pdf

F101
F101

PD - 94965BIRF1010EPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 84Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 0.14. Size:399K  international rectifier
irf1010zlpbf irf1010zpbf irf1010zspbf.pdf

F101
F101

PD - 95361AIRF1010ZPbFIRF1010ZSPbFIRF1010ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature Dl Fast Switching VDSS = 55Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 7.5mGDescriptionID = 75AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extr

 0.15. Size:180K  international rectifier
irf1010z.pdf

F101
F101

PD - 94652AUTOMOTIVE MOSFETIRF1010ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 7.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 0.16. Size:222K  international rectifier
irf1010elpbf irf1010espbf.pdf

F101
F101

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.17. Size:195K  international rectifier
irf1010e.pdf

F101
F101

PD - 91670IRF1010EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 84A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 0.18. Size:196K  international rectifier
irf1010esl.pdf

F101
F101

PD - 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 0.19. Size:407K  international rectifier
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf

F101
F101

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 0.20. Size:268K  international rectifier
auirf1010zstrl.pdf

F101
F101

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 0.21. Size:75K  philips
mf1011b900y 2.pdf

F101
F101

DISCRETE SEMICONDUCTORSDATA SHEETMF1011B900YMicrowave power transistor1997 Feb 18Product specificationSupersedes data of December 1994Philips Semiconductors Product specificationMicrowave power transistor MF1011B900YFEATURES QUICK REFERENCE DATAMicrowave performance up to Tmb =25C in a common-base class C Suitable for short and mediumnarrowband amplifier.pulse ap

 0.22. Size:49K  siemens
bf1012.pdf

F101
F101

BF 1012Silicon N-Channel MOSFET Tetrode For low-noise, gain-controlled input stages up to 1GHz Operating voltage 12V Integrated bias networkESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration PackageBF 1012 MYs Q62702-F1487 1 = S 2 = D 3 = G2 4 = G1 SOT-143Maximum RatingsParameter Symbol Values Unit

 0.23. Size:50K  siemens
bf1012s.pdf

F101
F101

BF 1012SSilicon N-Channel MOSFET TetrodeESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code PIN Configuration PackageBF 1012S NYs Q62702-F1627 1 = S 2 = D 3 = G2 4 = G1 SOT-143Maximum RatingsParameter Symbol Values UnitDrain-source voltage VDS 16 VContinuos drain current ID 25 mAGate 1/gate 2 peak source current IG1/2SM 10G

 0.24. Size:756K  infineon
auirf1010ez auirf1010ezs auirf1010ezl.pdf

F101
F101

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

 0.25. Size:292K  infineon
irf1010nspbf irf1010nlpbf.pdf

F101
F101

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.26. Size:752K  infineon
auirf1010z auirf1010zs auirf1010zl.pdf

F101
F101

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

 0.27. Size:225K  infineon
irf1010npbf.pdf

F101
F101

PD - 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

 0.28. Size:658K  infineon
auirf1018es.pdf

F101
F101

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

 0.29. Size:222K  infineon
irf1010espbf irf1010elpbf.pdf

F101
F101

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.30. Size:407K  infineon
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf

F101
F101

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 0.31. Size:164K  infineon
irf1010e.pdf

F101
F101

PD - 9.1670BIRF1010EHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

 0.32. Size:156K  infineon
auirf1018e.pdf

F101
F101

International Rectifier Product Detail Page Page 1 of 2Part Se AUIRF1018EPart: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB PackageDescription:Support Docs: N/A Commercial Datasheet Reliability ReportAutomotive MarketIR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

 0.33. Size:429K  infineon
irf1018epbf irf1018espbf irf1018eslpbf.pdf

F101
F101

PD - 97125IRF1018EPbFIRF1018ESPbFIRF1018ESLPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inDSMPSVDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 8.4m:ID 79ASBenefitsl Improved Gate, Avalanche and Dynamicdv/dt RuggednessDDDl

 0.34. Size:208K  utc
uf1010e.pdf

F101
F101

UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 11 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1features such as: low RDS(ON), fast switching, and low gate charge.Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1

 0.35. Size:218K  utc
uf1010a.pdf

F101
F101

UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS(ON), fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the 1requirements of high efficient devices form customers. TO-220 FEATURES * RDS(ON)

 0.36. Size:684K  cree
cmf10120d.pdf

F101
F101

CMF10120D-Silicon Carbide Power MOSFET VDS = 1200 VZ-FETTM MOSFET RDS(on) N-Channel Enhancement Mode = 160 m Qg = 47 nCFeatures PackageD D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Pb-Free Plating, RoHS Compliant, Halogen Free G GSTO-247-3 S Benefits Higher System Efficiency

 0.37. Size:166K  macom
mrf10120.pdf

F101
F101

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 9601215MHz Product Image Designed for 9601215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

 0.38. Size:181K  macom
mrf10150.pdf

F101
F101

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

 0.39. Size:851K  silikron
ssf1016d.pdf

F101
F101

SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

 0.40. Size:417K  silikron
ssf1010.pdf

F101
F101

SSF1010Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 0.41. Size:384K  silikron
ssf1010a.pdf

F101
F101

SSF1010AMain Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 0.42. Size:544K  silikron
ssf1016a.pdf

F101
F101

SSF1016AMain Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 0.43. Size:731K  silikron
ssf1016.pdf

F101
F101

SSF1016 Feathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

 0.44. Size:606K  nell
irf1010a irf1010h.pdf

F101
F101

RoHS IRF1010 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(84A, 60Volts)DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capabilityDDof 84A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts. They are designed as an extremely efficientG

 0.45. Size:238K  hgsemi
mrf1015mb.pdf

F101

HG RF POWER TRANSISTORMRF1015MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

 0.46. Size:341K  hgsemi
mrf1015ma.pdf

F101
F101

MRF1015MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 960 1215 MHzMinimum Gain = 10 dBMICROWAVE POWER 100% Tested for Load Mismatch at All

 0.47. Size:252K  inchange semiconductor
irf1010zs.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

 0.48. Size:252K  inchange semiconductor
irf1010ns.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

 0.49. Size:246K  inchange semiconductor
irf1010n.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.50. Size:258K  inchange semiconductor
irf1010ezs.pdf

F101
F101

Isc N-Channel MOSFET Transistor IRF1010EZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.51. Size:252K  inchange semiconductor
irf1010es.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ESFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

 0.52. Size:245K  inchange semiconductor
irf1010e.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010E IIRF1010EFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.53. Size:245K  inchange semiconductor
irf1010ez.pdf

F101
F101

isc N-Channel MOSFET Transistor IRF1010EZIIRF1010EZFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 0.54. Size:246K  inchange semiconductor
irf1018e.pdf

F101
F101

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1018EIIRF1018EFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.55. Size:258K  inchange semiconductor
irf1018es.pdf

F101
F101

Isc N-Channel MOSFET Transistor IRF1018ESFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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