F104
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F104
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar F104
F104
Datasheet (PDF)
0.1. Size:51K philips
blf1048.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF1048UHF power LDMOS transistorPreliminary specification 2000 Feb 02Supersedes data of 1999 July 01Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1048FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Sou
0.2. Size:124K philips
blf1046 n 6.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D381BLF1046UHF power LDMOS transistorPreliminary specification 2000 Sep 20Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1046FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on underside eliminates DC isolators, reducin
0.3. Size:94K philips
blf1043.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLF1043UHF power LDMOS transistorProduct specification 2003 Mar 13Supersedes data of 2002 November 11Philips Semiconductors Product specificationUHF power LDMOS transistor BLF1043FEATURES PINNING - SOT538A Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 85 mA1 drain Output power = 10 W (PEP
0.4. Size:122K philips
blf1047.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D390BLF1047UHF power LDMOS transistorPreliminary specification 2000 Oct 23Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1047FEATURES PINNING - SOT541A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on underside eliminates DC isolators, reducin
0.5. Size:58K philips
blf1043 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D438BLF1043UHF power LDMOS transistorObjective specification 2000 Feb 23Supersedes data of 2000 Feb 17Philips Semiconductors Objective specificationUHF power LDMOS transistor BLF1043FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source o
0.6. Size:98K philips
blf1046.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF1046UHF power LDMOS transistorProduct specification 2000 Dec 20Supersedes data of 2000 Oct 04Philips Semiconductors Product specificationUHF power LDMOS transistor BLF1046FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside eliminat
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
