Биполярный транзистор F104 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: F104
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 1 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO3
F104 Datasheet (PDF)
blf1048.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF1048UHF power LDMOS transistorPreliminary specification 2000 Feb 02Supersedes data of 1999 July 01Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1048FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Sou
blf1046 n 6.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D381BLF1046UHF power LDMOS transistorPreliminary specification 2000 Sep 20Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1046FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on underside eliminates DC isolators, reducin
blf1043.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLF1043UHF power LDMOS transistorProduct specification 2003 Mar 13Supersedes data of 2002 November 11Philips Semiconductors Product specificationUHF power LDMOS transistor BLF1043FEATURES PINNING - SOT538A Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 85 mA1 drain Output power = 10 W (PEP
blf1047.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D390BLF1047UHF power LDMOS transistorPreliminary specification 2000 Oct 23Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF1047FEATURES PINNING - SOT541A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on underside eliminates DC isolators, reducin
blf1043 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D438BLF1043UHF power LDMOS transistorObjective specification 2000 Feb 23Supersedes data of 2000 Feb 17Philips Semiconductors Objective specificationUHF power LDMOS transistor BLF1043FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source o
blf1046.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF1046UHF power LDMOS transistorProduct specification 2000 Dec 20Supersedes data of 2000 Oct 04Philips Semiconductors Product specificationUHF power LDMOS transistor BLF1046FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside eliminat
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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