F109 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F109
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 140 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO62
Búsqueda de reemplazo de F109
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F109 datasheet
..1. Size:971K fairchild semi
fch20n60 fca20n60 fca20n60 f109.pdf 
December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
..2. Size:868K fairchild semi
fqa36p15 fqa36p15 f109.pdf
September 2010 QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 110pF) This advanced technology has been espe
..3. Size:1062K fairchild semi
fch47n60 f133 fca47n60 fca47n60 f109.pdf
December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe
..4. Size:829K fairchild semi
fqa11n90 fqa11n90 f109.pdf
September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especi
..5. Size:481K fairchild semi
fca20n60 fca20n60 f109.pdf
August 2014 FCA20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an
..6. Size:862K fairchild semi
fqa13n50c f109.pdf
December 2013 FQA13N50C_F109 N-Channel QFET MOSFET 500 V, 13.5 A, 480 m Description Features These N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC) has been especia
..7. Size:823K fairchild semi
fqa11n90c f109.pdf
September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored
..8. Size:653K fairchild semi
fga25n120antdtu f109.pdf
u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC
..9. Size:932K fairchild semi
fga15n120antdtu f109.pdf
May 2006 FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1
..10. Size:987K fairchild semi
fca16n60 fca16n60 f109.pdf
December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor
..11. Size:784K fairchild semi
fqa90n15 f109.pdf
November 2007 QFET FQA90N15_F109 150V N-Channel MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 200pF) This advanced technology has been especially tailore
..13. Size:1054K fairchild semi
fqa9n90 f109.pdf
April 2013 FQA9N90_F109 N-Channel QFET MOSFET 900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 55 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF) techn
..14. Size:457K fairchild semi
fqa28n15 f109.pdf
April 2011 TM QFET FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailored t
..15. Size:856K fairchild semi
fqa36p15 f109.pdf
September 2010 QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 110pF) This advanced technology has been espe
..16. Size:718K fairchild semi
fda16n50 f109.pdf
July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especial
..17. Size:750K fairchild semi
fca20n60s fca20n60s f109.pdf
August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform
..18. Size:806K fairchild semi
fqa10n80c f109.pdf
August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to
..19. Size:807K fairchild semi
fqa8n90c f109.pdf
November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to
..20. Size:890K fairchild semi
fqa13n80 f109.pdf
July 2007 QFET FQA13N80_F109 800V N-Channel MOSFET Features Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored to
..21. Size:798K fairchild semi
fqa7n80c f109.pdf
September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored
..22. Size:740K fairchild semi
fda20n50 f109.pdf
July 2007 TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45.6 nC) stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has been especial
..23. Size:797K fairchild semi
fqa6n90c f109.pdf
September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t
..24. Size:749K fairchild semi
fqa24n50 f109.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been e
..25. Size:778K fairchild semi
fqa28n50 f109.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be
..26. Size:788K fairchild semi
fqa46n15 fqa46n15 f109.pdf
August 2007 QFET FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Features Description 50A, 150V, RDS(on) = 0.042 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 85 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 100pF) This advanced technology has been especiall
..27. Size:2910K onsemi
fqa9n90c f109.pdf
April 2014 FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 45 nC) stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF) technology
0.1. Size:104K motorola
mrf1090ma mrf1090mb.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE
0.2. Size:106K motorola
mrf1090m.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE POWER
0.3. Size:104K motorola
mrf1090marev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE
0.4. Size:106K motorola
mrf1090ma.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE POWER
0.6. Size:1730K onsemi
fqa6n90c-f109.pdf
FQA6N90C-F109 N-Channel QFET MOSFET Description 900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 A stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3
0.7. Size:1812K onsemi
fqa13n80-f109.pdf
FQA13N80-F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V, Description ID = 6.3 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 30 pF) planar stripe and DMOS technology. This advanced MOSFET technology has be
0.8. Size:1463K onsemi
fqa10n80c-f109.pdf
FQA10N80C-F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using ON Semiconductor s proprietary planar stripe and Low Gate Charge (Typ. 44 nC) DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF) been especiall
0.9. Size:1004K onsemi
fqa90n15-f109.pdf
FQA90N15-F109 N-Channel QFET MOSFET Description 150 V, 90 A, 18 m These N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 A This advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC) minimize on-
0.10. Size:1275K onsemi
fqa8n90c-f109.pdf
FQA8N90C-F109 N-Channel QFET MOSFET Description 900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3
0.11. Size:1506K onsemi
fqa11n90-f109.pdf
FQA11N90-F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 m Description This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V, and DMOS technology. This advanced MOSFET technology ID = 5.7 A has been especially tailored to reduce on-state resistance, Low
0.12. Size:1580K onsemi
fqa7n80c-f109.pdf
FQA7N80C-F109 N-Channel QFET MOSFET Description 800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC) technology has been especially tailored to reduce o
0.13. Size:909K onsemi
fqa13n50c-f109.pdf
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/s
0.15. Size:716K silikron
ssf1090a.pdf
SSF1090A Main Product Characteristics VDSS 100V RDS(on) 72m (typ) ID 15A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
0.16. Size:509K silikron
ssf1090.pdf
SSF1090 Feathers ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF1090 is a new generation of high voltage and low current N Channel en
0.17. Size:436K silikron
ssf1090d.pdf
SSF1090D Main Product Characteristics VDSS 100V RDS(on) 60m (typ.) ID 15A TO-252 (D-PAK) Marking and pi n Sc he mat ic d ia gram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
0.18. Size:180K hgsemi
mrf1090mb.pdf
HG RF POWER TRANSISTOR MRF1090MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry Sta
0.19. Size:255K hgsemi
mrf1090ma.pdf
HG RF POWER TRANSISTOR MRF1090MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry Sta
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History: DK53AD
| HM117
