December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe

December 2008TMSuperFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

August 2014FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )resistance an

December 2013FQA13N50C_F109N-Channel QFET MOSFET500 V, 13.5 A, 480 mDescription FeaturesThese N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.75 Aplanar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC)has been especia

September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

May 2006FGA15N120ANTD / FGA15N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1

December 2008 TMSuperFETFCA16N60 / FCA16N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

November 2007 QFETFQA90N15_F109150V N-Channel MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 200pF)This advanced technology has been especially tailore

July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

April 2013FQA9N90_F109N-Channel QFET MOSFET900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 55 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF)techn

April 2011TMQFETFQA28N15150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailored t

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe

July 2007TMUniFETFDA16N50 / FDA16N50_F109500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especial

August 2007TMSuperFETFCA20N60S / FCA20N60S_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

November 2007 QFETFQA8N90C_F109900V N-Channel MOSFETFeatures Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

July 2007 QFETFQA13N80_F109800V N-Channel MOSFETFeatures Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especially tailored to

September 2007 QFETFQA7N80C_F109800V N-Channel MOSFETFeatures Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 10pF)This advanced technology has been especially tailored

July 2007TMUniFETFDA20N50 / FDA20N50_F109500V N-Channel MOSFETFeatures Description 22A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especial

September 2007 QFETFQA6N90C_F109900V N-Channel MOSFETFeatures Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 11pF)This advanced technology has been especially tailored t

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be

August 2007 QFETFQA46N15 / FQA46N15_F109150V N-Channel MOSFETFeatures Description 50A, 150V, RDS(on) = 0.042 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 85 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 100pF)This advanced technology has been especiall

April 2014FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 AThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 45 nC)stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF)technology

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER

FQA6N90C-F109 N-Channel QFET MOSFETDescription900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 Astripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

FQA13N80-F109N-Channel QFET MOSFET800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V,DescriptionID = 6.3 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 30 pF)planar stripe and DMOS technology. This advanced MOSFET technology has be

FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall

FQA90N15-F109 N-Channel QFET MOSFETDescription150 V, 90 A, 18 mThese N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 AThis advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC)minimize on-

FQA8N90C-F109 N-Channel QFET MOSFETDescription900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 Vstripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

FQA11N90-F109N-Channel QFET MOSFET 900 V, 11.4 A, 960 mDescriptionThis N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V,and DMOS technology. This advanced MOSFET technology ID = 5.7 Ahas been especially tailored to reduce on-state resistance, Low

FQA7N80C-F109 N-Channel QFET MOSFETDescription800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC)technology has been especially tailored to reduce o

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SSF1090AMain Product Characteristics: VDSS 100V RDS(on) 72m(typ) ID 15A Marking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF1090 Feathers: ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF1090 is a new generation of high voltage and low current NChannel en

SSF1090D Main Product Characteristics: VDSS 100V RDS(on) 60m (typ.) ID 15A TO-252 (D-PAK) Marking and pi n Sc he mat ic d ia gram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

HG RF POWER TRANSISTORMRF1090MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta

HG RF POWER TRANSISTORMRF1090MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta