F110 Todos los transistores

 0.1. Size:101K  international rectifier
 irf1104.pdf

PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 0.2. Size:131K  international rectifier
 2n6782 irff110.pdf

PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

 0.3. Size:208K  international rectifier
 irf1104l.pdf

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 0.4. Size:185K  international rectifier
 irf1104pbf.pdf

PD - 94967 IRF1104PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 100A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 0.5. Size:208K  international rectifier
 irf1104s.pdf

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 0.6. Size:439K  philips
 bf1100wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain

 0.7. Size:351K  philips
 bf1105 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 NXP Semiconductors Product specification BF1105; BF1105R; N-channel dual-gate MOS-FETs BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 0.8. Size:311K  philips
 bf1100 n.pdf

BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ht

 0.9. Size:135K  philips
 bf1101 bf1101r bf1101wr 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to i

 0.10. Size:100K  philips
 bf1100wr 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 0.11. Size:60K  philips
 bf1107 bf1107w 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES Currentless RF switch. handbook, halfpage 3 APPLICATIONS Various RF switching applications such as 12 - Passive loop through

 0.12. Size:159K  philips
 bf1100 bf1100r 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Speciall

 0.13. Size:114K  philips
 bf1109 bf1109r bf1109wr 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 colu

 0.14. Size:347K  philips
 bf1109 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 NXP Semiconductors Product specification BF1109; BF1109R; N-channel dual-gate MOS-FETs BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 0.15. Size:64K  philips
 bf1108 bf1108r.pdf

BF1108; BF1108R Silicon RF switches Rev. 04 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.

 0.16. Size:127K  philips
 bf1102 bf1102r 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102

 0.17. Size:146K  philips
 bf1100wr 0.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 0.18. Size:119K  philips
 bf1105 bf1105r bf1105wr 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 col

 0.19. Size:53K  philips
 bf1107 2.pdf

BF1107 N-channel single gate MOSFET Rev. 04 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against ex

 0.20. Size:373K  philips
 bf1101 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 NXP Semiconductors Product specification BF1101; BF1101R; N-channel dual-gate MOS-FETs BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to

 0.21. Size:109K  philips
 bf1100 bf1100r 01.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Speciall

 0.22. Size:67K  philips
 bf1108 bf1108r 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification 1999 Nov 18 Supersedes data of 1999 Aug 19 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES Specially designed for low loss RF switching up to 1 GHz. handbook, 2 columns 43 APPLICATIONS Various RF switching applications such as 12 Pa

 0.23. Size:370K  philips
 bf1102 r.pdf

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102

 0.24. Size:1225K  st
 stf110n10f7 stp110n10f7.pdf

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance 3 3 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Sw

 0.25. Size:300K  onsemi
 ntpf110n65s3hf.pdf

NTPF110N65S3HF MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 110 mW @ 10 V 30 A balance technology for outstanding low on-resistance and lower gate charge performance. This advance

 0.26. Size:31K  ssdi
 sff110s.pdf

SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 DESIGNER S DATA SHEET N-Channel MOSFET Transistor Features Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Prop

 0.27. Size:300K  sisemi
 sif110n060.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF110N060 N- MOS / N-CHANNEL POWER MOSFET SIF110N06

 0.28. Size:359K  silikron
 ssf1109.pdf

SSF1109 Main Product Characteristics VDSS 110V RDS(on) 6.7mohm(typ.) ID 130A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 0.29. Size:1381K  cn wxdh
 110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf

110N04/F110N04/I110N04/ E110N04/B110N04/D110N04 160A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 40V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 3.5m DS(on) TYP) RoHS standard. I = 160A D 2 Features Fast Switching Low ON Resistance(Rdson

 0.30. Size:568K  ncepower
 nce60nf110.pdf

NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/

 0.31. Size:571K  ncepower
 nce60nf110f.pdf

NCE60NF110F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC

 0.32. Size:775K  semihow
 hrlf110n03k.pdf

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

 0.33. Size:245K  inchange semiconductor
 irf1104.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1104 IIRF1104 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM