PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-

PD - 90423CIRFF110REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782HEXFETTRANSISTORS JANTXV2N6782THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF110 100V .60 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

DISCRETE SEMICONDUCTORS DATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 02Supersedes data of 1997 Dec 01NXP Semiconductors Product specificationBF1105; BF1105R;N-channel dual-gate MOS-FETsBF1105WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

DISCRETE SEMICONDUCTORSDATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to i

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

DISCRETE SEMICONDUCTORSDATA SHEETBF1107; BF1107WN-channel single gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1998 Jun 22Philips Semiconductors Product specificationN-channel single gate MOS-FETs BF1107; BF1107WFEATURES Currentless RF switch.handbook, halfpage 3APPLICATIONS Various RF switching applications such as:12- Passive loop through

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

DISCRETE SEMICONDUCTORSDATA SHEETBF1109; BF1109R; BF1109WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 08Supersedes data of 1997 Sep 03File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 colu

DISCRETE SEMICONDUCTORS DATA SHEETBF1109; BF1109R; BF1109WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 08Supersedes data of 1997 Sep 03NXP Semiconductors Product specificationBF1109; BF1109R;N-channel dual-gate MOS-FETsBF1109WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

BF1108; BF1108RSilicon RF switchesRev. 04 29 May 2008 Product data sheet1. Product profile1.1 General descriptionThese switches are a combination of a depletion type Field-Effect Transistor (FET) and aband-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. Thelow loss and high isolation capabilities of these devices provide excellent RF switchingfunctions.

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128BF1102; BF1102RDual N-channel dual gateMOS-FETsProduct specification 2000 Apr 11Supersedes data of 1999 Jul 01Philips Semiconductors Product specificationDual N-channel dual gate MOS-FETs BF1102; BF1102RFEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a singleDESCRIPTIONpackage PINBF1102

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

DISCRETE SEMICONDUCTORSDATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification1997 Dec 02Supersedes data of 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 col

BF1107N-channel single gate MOSFETRev. 04 9 January 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1107 is a depletion type field-effect transistor in a SOT23 package. The low lossand high isolation capabilities of this MOSFET provide excellent RF switching functions.Integrated diodes between gate and source and between gate and drain protect againstex

DISCRETE SEMICONDUCTORS DATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01NXP Semiconductors Product specificationBF1101; BF1101R;N-channel dual-gate MOS-FETsBF1101WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

DISCRETE SEMICONDUCTORSDATA SHEETBF1108; BF1108RSilicon RF switchesProduct specification 1999 Nov 18Supersedes data of 1999 Aug 19Philips Semiconductors Product specificationSilicon RF switches BF1108; BF1108RFEATURES Specially designed for low loss RF switchingup to 1 GHz.handbook, 2 columns43APPLICATIONS Various RF switching applications such as:12 Pa

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageMBD128BF1102; BF1102RDual N-channel dual gate MOS-FETsProduct specification 2000 Apr 11Supersedes data of 1999 Jul 01NXP Semiconductors Product specificationDual N-channel dual gate MOS-FETs BF1102; BF1102RFEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTIONpackage PINBF1102

STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

NTPF110N65S3HFMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 30 A, 110 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 110 mW @ 10 V 30 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advance

SFF110S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.5 A /100 Volts / 0.6 DESIGNERS DATA SHEET N-Channel MOSFET Transistor Features: Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Prop

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF110N060N- MOS / N-CHANNEL POWER MOSFET SIF110N06

SSF1109Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.)ID 130AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

NCE60NF110N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC/

NCE60NF110FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1104 IIRF1104FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM