F114 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F114
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 7.5 A
Temperatura operativa máxima (Tj): 140 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO62
Búsqueda de reemplazo de F114
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F114 datasheet
draf114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114T DRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114E DRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac
draf114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114Y DRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa
Otros transistores... F106 , F107 , F108 , F109 , F110 , F111 , F112 , F113 , 2SD669A , F115 , F116 , F117 , F117A , F118 , F118A , F119 , F119A .
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