F120 Todos los transistores

APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur

APT50GF120HR 1200V 62A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated

APT33GF120B2RD/LRD APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C L

PD - 94567 GB50XF120K IGBT 6PACK MODULE Features VCES = 1200V Low VCE (on) Non Punch Through IGBT Technology Low Diode VF IC = 50A, TC=80 C 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode tsc > 10 s, TJ=150 C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient ECONO2 6PACK Ceramic D

PD - 93803 PROVISIONAL IRF1205 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temprature Fast Switching RDS(on) = 0.027 Fully Avalanche Rated G ID = 41A S Description Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF IC = 25A, TC=80 C 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode tsc > 10 s, TJ=150 C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate VC

PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin

PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF IC = 35A, TC=80 C 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode tsc > 10 s, TJ=150 C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient ECONO2 6PACK Ceramic D

Bulletin PD-27208 01/06 GB50YF120N IGBT FOUR PAK MODULE VCES = 1200V Features Square RBSOA HEXFRED low Qrr, low Switching Energy IC = 50A @ TC = 66 C Positive VCE(on) Temperature Coefficient Copper Baseplate VCE(on) typ. = 3.49V Low Stray Inductance Design ECONO2 4PAK Benefits Benchmark Efficiency for SMPS appreciation in particular HF welding Rugged

PD - 90639A REPETITIVE AVALANCHE AND dv/dt RATED IRLF120 HEXFET TRANSISTORS 100V, N-CHANNEL THRU-HOLE (TO-39) Product Summary Part Number BVDSS RDS(on) ID IRLF120 100V 0.35 5.3A The Logic Level L series of power MOSFETs are de- signed to be operated with level logic gate-to-source voltage of 5V. In addition to the well established characterstics of HEXFETs , they have th

PD - 94569 GB25XF120K IGBT 6PACK MODULE Features VCES = 1200V Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability IC = 25A, TC=80 C Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode tsc > 10 s, TJ=150 C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient ECONO2 6PACK Ceramic DB

PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF IC = 15A, TC=80 C 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode tsc > 10 s, TJ=150 C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate VC

Bulletin I27209 01/06 GB75YF120N IGBT FOUR PAK MODULE Features VCES = 1200V Square RBSOA HEXFRED low Qrr, low Switching Energy IC = 75A @ TC = 67 C Positive VCE(on) Temperature Coefficient Copper Baseplate VCE(on) typ. = 3.4V Low Stray Inductance Design ECONO2 4PAK Benefits Benchmark Efficiency for SMPS appreciation in particular HF welding Rugged Tr

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 NXP Semiconductors Product specification BF1201; BF1201R; N-channel dual-gate PoLo MOS-FETs BF1201WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

BF1208D Dual N-channel dual gate MOSFET Rev. 01 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits en

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package. One with a fully integrated bias and one with a 1gate

DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2010 Sep 16 Supersedes data of 2000 Mar 29 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admi

BF1207 Dual N-channel dual gate MOSFET Rev. 01 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulati

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 Philips Semiconductors Product specification BF1201; BF1201R; N-channel dual-gate PoLo MOS-FETs BF1201WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2010 Sep 16 Supersedes data of 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1gate 1 (a) Superi

BF1205C Dual N-channel dual gate MOS-FET Rev. 02 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circ

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification 2001 Apr 25 Supersedes data of 2000 Dec 04 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 gate 1 (a) Super

BF1206F Dual N-channel dual gate MOSFET Rev. 01 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation perform

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 drain (b) Superior cross-modulation performance

DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 Philips Semiconductors Product specification BF1202; BF1202R; N-channel dual-gate PoLo MOS-FETs BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

STP120NF10, STB120NF10 STF120NF10, STW120NF10 N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFET in TO-247, TO-220, D PAK, TO-220FP Features Type VDSS RDS(on) max ID STW120NF10 110 A 3 1 STP120NF10 110 A 100V

VS-GB75YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of

VS-GB75YF120UT www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912

/ Technical Information IGBT- FF1200R17KE3_B2 IGBT-modules IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25 C V 1700 V vj CES Collector-emitter voltage DC T = 80 C, T = 150 C I 1200 A C vj max C n

Technische Information / Technical Information IGBT-Module FF1200R12KE3 IGBT-modules Vorl ufige Daten / Preliminary Data V = 1200V CES I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Application Hochleistungsumrichter High Powe

FF1200R17KP4_B2 IHM-A / IGBT4 IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode V = 1700V CES I = 1200A / I = 2400A C nom CRM Potential Applications Medium voltage converters High power converters Tract

FF1200R12IE5 PrimePACK 2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTC PrimePACK 2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC V = 1200V CES I = 1200A / I = 2400A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS s

FF1200R12IE5P PrimePACK 2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTC / bereits aufgetragenem Thermal Interface Material PrimePACK 2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC / pre-applied Thermal Interface Material V = 1200V CES I = 1200A / I = 2400A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumr

/ Technical Information IGBT- DF120R12W2H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 40A / I = 80A C nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Mechanical Featur

Technische Information / Technical Information IGBT-Modul FF1200R17KP4_B2 IGBT-Module IHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode V = 1700V CES I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Mittelspannu

Technische Information / Technical Information IGBT-Module FF1200R17KE3 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 1200 A C vj max C nom Continuous DC collector

IXA33IF1200HB VCES = 1200V XPT IGBT I= 58 A C25 VCE(sat) = 1.8V Copack Part number IXA33IF1200HB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

IXA60IF1200NA VCES = 1200V XPT IGBT I= 88 A C25 VCE(sat) = 1.8V Copack Part number IXA60IF1200NA Backside isolated C(3) (G) 2 E(1+4) Features / Advantages Applications Package SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3000 coefficient of the on-state voltage Solar inverter Industry standard

MIXA100PF1200TMH preliminary VCES = 2x1200 V XPT IGBT Module I= 155 A C25 VCE(sat) = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA100PF1200TMH Backside isolated 8 7 6 5 4 2 3 1 9 Features / Advantages Applications Package High level of integration AC motor drives Housing MiniPack2 Rugged XPT design (Xtreme light Punch Through) Pumps, Fa

MIXA450PF1200TSF VCES = 2x 1200V XPT IGBT Module I= 650A C25 VCE(sat) = 1.8V Phase leg + free wheeling Diodes + NTC Part number MIXA450PF1200TSF Backside isolated 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages Applications Package SimBus F High level of integration - only one AC motor drives Isolation Voltage V 3000 power semiconductor module required Pu

MIXA225PF1200TSF preliminary VCES = 2x 1200V XPT IGBT Module I= 360A C25 VCE(sat) = 1.8V Phase leg + free wheeling Diodes + NTC Part number MIXA225PF1200TSF Backside isolated 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages Applications Package SimBus F High level of integration - only one AC motor drives Isolation Voltage V 3000 power semiconductor module re

MIXA300PF1200TSF tentative VCES = 2x 1200V XPT IGBT Module I= 465A C25 VCE(sat) = 1.8V Phase leg + free wheeling Diodes + NTC Part number MIXA300PF1200TSF Backside isolated 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages Applications Package SimBus F High level of integration - only one AC motor drives Isolation Voltage V 3000 power semiconductor module requ

MIXA225RF1200TSF tentative VCES = 1200 V XPT IGBT Module IC25 = 360 A VCE(sat) = 1.8 V Boost chopper + free wheeling Diodes + NTC Part number MIXA225RF1200TSF 5 2 1 8 9 T 4 3 DBoost D 10/11 6 Features / Advantages Applications Package SimBus F High level of integration - only one Brake for AC motor drives Industry standard outline power semiconductor module r

IXA4IF1200TC preliminary VCES = 1200V XPT IGBT I= 9 A C25 VCE(sat) = 1.8V Copack Part number IXA4IF1200TC Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-268AA (D3Pak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS complian

IXA12IF1200PB preliminary VCES = 1200V XPT IGBT I= 20 A C25 VCE(sat) = 1.8V Copack Part number IXA12IF1200PB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-220 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant

IXA12IF1200HB preliminary IC25 = 20 A XPT IGBT VCES = 1200 V Copack VCE(sat)typ = 1.8 V C (2) Part number IXA12IF1200HB (G) 1 E(3) Features / Advantages Applications Package Easy paralleling due to the positive temperature AC motor drives Housing TO-247 coefficient of the on-state voltage Solar inverter rIndustry standard outline Rugged XPT design (Xt

IXA12IF1200PC preliminary IC25 = 20 A XPT IGBT VCES = 1200 V Copack VCE(sat)typ = 1.8 V C (2) Part number IXA12IF1200PC (G) 1 E(3) Features / Advantages Applications Package Easy paralleling due to the positive temperature AC motor drives Housing TO-263 (D2Pak) coefficient of the on-state voltage Solar inverter rIndustry standard outline Rugged XPT de

IXA20IF1200HB VCES = 1200V XPT IGBT I= 38 A C25 VCE(sat) = 1.8V Copack Part number IXA20IF1200HB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

IXA45IF1200HB VCES = 1200V XPT IGBT I= 78 A C25 VCE(sat) = 1.8V Copack Part number IXA45IF1200HB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

IXA4IF1200UC preliminary VCES = 1200V XPT IGBT I= 9 A C25 VCE(sat) = 1.8V Copack Part number IXA4IF1200UC Marking on Product X4TAUF Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-252 (DPak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar i

IXA12IF1200TC preliminary VCES = 1200V XPT IGBT I= 20 A C25 VCE(sat) = 1.8V Copack Part number IXA12IF1200TC Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-268AA (D3Pak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compl

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMC (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM300F120CMS (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 25 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM400F120CMS (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 25 A Gate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com ELECTRICAL CHARACTERISTICS OM150F120CMA (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2 A Gate Emitter Leakage Current, VGE=+/-15V

APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur

APT20GF120KR APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C G C Low Tail Current Ultra Low Leakage Current E Avala

APT20GF120KR 1200V 32A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G C Low Forward Voltage Drop High Freq. Switching to 20KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated

TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fa

APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current Avala

APT60GF120JRD 1200V 100A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C

APT40GF120JRD 1200V 60A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L

TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 1200V APT60GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP file # E145592 Low Forwa

APT11GF120KR 1200V 22A Fast IGBT TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G C Low Forward Voltage Drop High Freq. Switching to 20KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated

APT33GF120HR 1200V 38A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated

APT11GF120BRD1 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C E C Low Tail Cu

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) FAST IGBT & FRED D3PAK (S) C The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G E technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) FAST IGBT & FRED D3PAK (S) C The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G E technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP file # E145592 Low Forwa

APT20GF120BRD APT20GF120SRD 1200V 32A Fast IGBT & FRED TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D3PAK Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness G C and fast switching speed. C E G E Low Forward Voltage Drop High Freq. Switching

APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current Avala

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and f

APT50GF120JRD 1200V 75A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L

APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage D

APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq

For more information, contact Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http //www.collmer.com This datasheet has been download from www.datasheetcatalog.com Datasheets for electronics components.

APT40GF120JRDQ2 TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTO

APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

2830 S. Fairview Street Santa Ana, CA 92704 MSAGA11F120D Phone (714) 979-8220 Fast IGBT Die for Implantable Fax (714) 559-5989 Cardio Defibrillator Applications DESCRIPTION N-Channel enhancement mode high density IGBT die Passivation Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization Al/1%Si for aluminum wire bonding, 3.2 um typical. 55 Collect

APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

APT4F120S 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, h

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

APT17F120J 1200V, 18A, 0.58 Max, trr 330ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

APT13F120B APT13F120S 1200V, 14A, 1.2 Max trr, 250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

APT32F120J 1200V, 33A, 0.32 Max, trr 430ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone (562) 404-4474 * Fax (562) 404-1773 9.2 AMPS 100 VOLTS DESIGNER'S DATA SHEET 0.35 QUAD N-CHANNEL POWER MOSFET FEATURES Rugged construction with poly silicon gate Low RDS (on) and high transconductance 28 PIN CLCC Excellent high temperature stability Very fast

DGC40F120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage V , typ = 2.1V

May 2017 HRF120N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 100 V Advanced Trench Process Technology ID 60 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 10 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter System 8

VBQF1206 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.0055 at VGS = 4.5V 58 20 9.4 nC 0.0057 at VGS = 2.5 V 45 APPLICATIONS High power density DC/DC Synchronous rectification Embedded DC/DC DFN 3x3 EP D Bottom View Top View Top View 1

GPK200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXIN s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute

GPU100HF120D1 GPU100HF120D1 IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =3.2V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applica

GPU200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

GPU150HF120D2 IGBT Module 1200V/150A 2 in one-package Features 1200V150A,V =3.2V@150A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

GPK100HF120D1 GPK100HF120D1 IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat

GPU75HF120D1 GPU75HF120D1 IGBT Module 1200V/75A 2 in one-package Features 1200V75A,V =3.2V@75A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications

GPU50HF120D1 GPU50HF120D1 IGBT Module 1200V/50A 2 in one-package Features 1200V50A,V =3.2V@50A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications

GPU200HF120D2SE 1200V/200A 2 in one-package Preliminary Data Features 1200V/200A,VCE =2.30V (sat)(typ) SPT Soft Punch Through technology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequ

GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi

Mar.2020 LEGM75BF120L5H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame

LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve