F120 Specs and Replacement
Type Designator: F120
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
F120 Substitution
- BJT ⓘ Cross-Reference Search
F120 datasheet
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stp120nf10 stb120nf10 stf120nf10 stw120nf10.pdf
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IXA12IF1200PB preliminary VCES = 1200V XPT IGBT I= 20 A C25 VCE(sat) = 1.8V Copack Part number IXA12IF1200PB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-220 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant ... See More ⇒
IXA12IF1200HB preliminary IC25 = 20 A XPT IGBT VCES = 1200 V Copack VCE(sat)typ = 1.8 V C (2) Part number IXA12IF1200HB (G) 1 E(3) Features / Advantages Applications Package Easy paralleling due to the positive temperature AC motor drives Housing TO-247 coefficient of the on-state voltage Solar inverter rIndustry standard outline Rugged XPT design (Xt... See More ⇒
IXA12IF1200PC preliminary IC25 = 20 A XPT IGBT VCES = 1200 V Copack VCE(sat)typ = 1.8 V C (2) Part number IXA12IF1200PC (G) 1 E(3) Features / Advantages Applications Package Easy paralleling due to the positive temperature AC motor drives Housing TO-263 (D2Pak) coefficient of the on-state voltage Solar inverter rIndustry standard outline Rugged XPT de... See More ⇒
IXA20IF1200HB VCES = 1200V XPT IGBT I= 38 A C25 VCE(sat) = 1.8V Copack Part number IXA20IF1200HB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de... See More ⇒
IXA45IF1200HB VCES = 1200V XPT IGBT I= 78 A C25 VCE(sat) = 1.8V Copack Part number IXA45IF1200HB Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de... See More ⇒
IXA4IF1200UC preliminary VCES = 1200V XPT IGBT I= 9 A C25 VCE(sat) = 1.8V Copack Part number IXA4IF1200UC Marking on Product X4TAUF Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-252 (DPak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar i... See More ⇒
IXA12IF1200TC preliminary VCES = 1200V XPT IGBT I= 20 A C25 VCE(sat) = 1.8V Copack Part number IXA12IF1200TC Backside collector 2(C) (G) 1 3(E) Features / Advantages Applications Package TO-268AA (D3Pak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compl... See More ⇒
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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM200F120CMD (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10 A Gate Emitter Leakage Current, VGE=+/-1... See More ⇒
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS OM400F120CMS (Tc= 25 C unless otherwise specified) Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 25 A Gate Emitter Leakage Current, VGE=+/-1... See More ⇒
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APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur... See More ⇒
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APT33GF120HR 1200V 38A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated ... See More ⇒
APT11GF120BRD1 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C E C Low Tail Cu... See More ⇒
TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) FAST IGBT & FRED D3PAK (S) C The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G E technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery... See More ⇒
TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) FAST IGBT & FRED D3PAK (S) C The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G E technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery... See More ⇒
APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq... See More ⇒
TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP file # E145592 Low Forwa... See More ⇒
APT20GF120BRD APT20GF120SRD 1200V 32A Fast IGBT & FRED TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D3PAK Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness G C and fast switching speed. C E G E Low Forward Voltage Drop High Freq. Switching... See More ⇒
APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current Avala... See More ⇒
TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and f... See More ⇒
APT50GF120JRD 1200V 75A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L... See More ⇒
APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage D... See More ⇒
APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq... See More ⇒
For more information, contact Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http //www.collmer.com This datasheet has been download from www.datasheetcatalog.com Datasheets for electronics components. ... See More ⇒
APT40GF120JRDQ2 TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTO... See More ⇒
APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge... See More ⇒
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava... See More ⇒
2830 S. Fairview Street Santa Ana, CA 92704 MSAGA11F120D Phone (714) 979-8220 Fast IGBT Die for Implantable Fax (714) 559-5989 Cardio Defibrillator Applications DESCRIPTION N-Channel enhancement mode high density IGBT die Passivation Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization Al/1%Si for aluminum wire bonding, 3.2 um typical. 55 Collect... See More ⇒
APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low... See More ⇒
APT4F120S 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, h... See More ⇒
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava... See More ⇒
APT17F120J 1200V, 18A, 0.58 Max, trr 330ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig... See More ⇒
APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ... See More ⇒
7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120... See More ⇒
APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt... See More ⇒
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt... See More ⇒
APT13F120B APT13F120S 1200V, 14A, 1.2 Max trr, 250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. ... See More ⇒
7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120... See More ⇒
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt... See More ⇒
APT32F120J 1200V, 33A, 0.32 Max, trr 430ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi... See More ⇒
PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone (562) 404-4474 * Fax (562) 404-1773 9.2 AMPS 100 VOLTS DESIGNER'S DATA SHEET 0.35 QUAD N-CHANNEL POWER MOSFET FEATURES Rugged construction with poly silicon gate Low RDS (on) and high transconductance 28 PIN CLCC Excellent high temperature stability Very fast ... See More ⇒
DGC40F120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d... See More ⇒
DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage V , typ = 2.1V ... See More ⇒
May 2017 HRF120N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 100 V Advanced Trench Process Technology ID 60 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 10 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter System 8... See More ⇒
VBQF1206 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.0055 at VGS = 4.5V 58 20 9.4 nC 0.0057 at VGS = 2.5 V 45 APPLICATIONS High power density DC/DC Synchronous rectification Embedded DC/DC DFN 3x3 EP D Bottom View Top View Top View 1... See More ⇒
GPK200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXIN s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute... See More ⇒
GPU100HF120D1 GPU100HF120D1 IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =3.2V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applica... See More ⇒
GPU200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut... See More ⇒
GPU150HF120D2 IGBT Module 1200V/150A 2 in one-package Features 1200V150A,V =3.2V@150A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut... See More ⇒
GPK100HF120D1 GPK100HF120D1 IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat... See More ⇒
GPU75HF120D1 GPU75HF120D1 IGBT Module 1200V/75A 2 in one-package Features 1200V75A,V =3.2V@75A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications... See More ⇒
GPU50HF120D1 GPU50HF120D1 IGBT Module 1200V/50A 2 in one-package Features 1200V50A,V =3.2V@50A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications... See More ⇒
GPU200HF120D2SE 1200V/200A 2 in one-package Preliminary Data Features 1200V/200A,VCE =2.30V (sat)(typ) SPT Soft Punch Through technology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequ... See More ⇒
GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi... See More ⇒
Mar.2020 LEGM75BF120L5H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame... See More ⇒
LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve... See More ⇒
Detailed specifications: F115, F116, F117, F117A, F118, F118A, F119, F119A, BC547B, F120A, F121, F121A, F122, F122A, F123, F123A, F124
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