F120 Datasheet, Equivalent, Cross Reference Search

APT11GF120BRD1200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L

PD - 94567GB50XF120KIGBT 6PACK MODULEFeaturesVCES = 1200V Low VCE (on) Non Punch Through IGBT Technology Low Diode VFIC = 50A, TC=80C 10s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diodetsc > 10s, TJ=150C Reverse Recovery Characteristics Positive VCE (on) Temperature CoefficientECONO2 6PACK Ceramic D

PD - 93803PROVISIONALIRF1205HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175 C Operating Temprature Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGID = 41A SDescriptionFifth Generation MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

PD - 94552GB25RF120KIGBT PIM MODULEVCES = 1200VFeatures Low VCE (on) Non Punch Through IGBT Technology Low Diode VFIC = 25A, TC=80C 10s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diodetsc > 10s, TJ=150C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC SubstrateVC

PD - 90426CIRFF120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788HEXFETTRANSISTORS JANTXV2N6788THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF120 100V 0.30 6.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

PD - 94570GB35XF120KIGBT 6PACK MODULEVCES = 1200VFeatures Low VCE (on) Non Punch Through IGBT Technology Low Diode VFIC = 35A, TC=80C 10s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diodetsc > 10s, TJ=150C Reverse Recovery Characteristics Positive VCE (on) Temperature CoefficientECONO2 6PACK Ceramic D

Bulletin PD-27208 01/06GB50YF120NIGBT FOUR PAK MODULEVCES = 1200V Features Square RBSOA HEXFRED low Qrr, low Switching Energy IC = 50A @ TC = 66C Positive VCE(on) Temperature Coefficient Copper BaseplateVCE(on) typ. = 3.49V Low Stray Inductance DesignECONO2 4PAKBenefits Benchmark Efficiency for SMPS appreciationin particular HF welding Rugged

PD - 90639AREPETITIVE AVALANCHE AND dv/dt RATED IRLF120HEXFETTRANSISTORS 100V, N-CHANNELTHRU-HOLE (TO-39)Product Summary Part Number BVDSS RDS(on) IDIRLF120 100V 0.35 5.3AThe Logic Level L series of power MOSFETs are de-signed to be operated with level logic gate-to-sourcevoltage of 5V. In addition to the well establishedcharacterstics of HEXFETs, they have th

PD - 94569GB25XF120KIGBT 6PACK MODULEFeaturesVCES = 1200V Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10s Short Circuit Capability IC = 25A, TC=80C Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diodetsc > 10s, TJ=150C Reverse Recovery Characteristics Positive VCE (on) Temperature CoefficientECONO2 6PACK Ceramic DB

PD - 94571GB15RF120KIGBT PIM MODULEVCES = 1200VFeatures Low VCE (on) Non Punch Through IGBT Technology Low Diode VFIC = 15A, TC=80C 10s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diodetsc > 10s, TJ=150C Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC SubstrateVC

Bulletin I27209 01/06GB75YF120NIGBT FOUR PAK MODULE Features VCES = 1200V Square RBSOA HEXFRED low Qrr, low Switching EnergyIC = 75A @ TC = 67C Positive VCE(on) Temperature Coefficient Copper BaseplateVCE(on) typ. = 3.4V Low Stray Inductance DesignECONO2 4PAKBenefits Benchmark Efficiency for SMPS appreciationin particular HF welding Rugged Tr

DISCRETE SEMICONDUCTORS DATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLo MOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01NXP Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

BF1208DDual N-channel dual gate MOSFETRev. 01 16 May 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1208D is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch. The integrated switch is operated by the gate1bias of amplifier B.The source and substrate are interconnected. Internal bias circuits en

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1205Dual N-channel dual gate MOS-FETProduct specification 2003 Sep 30NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1205FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage. One with a fully integrated bias and one with a 1gate

DISCRETE SEMICONDUCTORS DATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLo MOS-FETsProduct specification 2010 Sep 16Supersedes data of 2000 Mar 29NXP Semiconductors Product specificationN-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admi

BF1207Dual N-channel dual gate MOSFETRev. 01 28 July 2005 Product data sheet1. Product profile1.1 General descriptionThe BF1207 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulati

DISCRETE SEMICONDUCTORSDATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1204Dual N-channel dual gate MOS-FETProduct specification 2010 Sep 16Supersedes data of 2001 Apr 25NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1204FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1gate 1 (a) Superi

BF1205CDual N-channel dual gate MOS-FETRev. 02 15 August 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1205C is a combination of two dual gate MOS-FET amplifiers with shared sourceand gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1bias of amplifier b.The source and substrate are interconnected. Internal bias circ

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1203Dual N-channel dual gate MOS-FETProduct specification 2001 Apr 25Supersedes data of 2000 Dec 04NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1203FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 gate 1 (a) Super

BF1206FDual N-channel dual gate MOSFETRev. 01 30 January 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1206F is a combination of two different dual gate MOSFET amplifiers with sharedsource and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulation perform

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1206Dual N-channel dual-gate MOS-FETProduct specification 2003 Nov 17NXP Semiconductors Product specificationDual N-channel dual-gate MOS-FET BF1206FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 drain (b) Superior cross-modulation performance

DISCRETE SEMICONDUCTORSDATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1202; BF1202R;N-channel dual-gate PoLo MOS-FETsBF1202WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

VS-GB50YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 50 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

VS-GB75YF120UTwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912

/ Technical InformationIGBT-FF1200R17KE3_B2IGBT-modulesIGBT- / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltageDC T = 80C, T = 150C I 1200 AC vj max C n

Technische Information / Technical InformationIGBT-ModuleFF1200R12KE3IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Application Hochleistungsumrichter High Powe

FF1200R17KP4_B2IHM-A /IGBT4IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRM Potential Applications Medium voltage converters High power converters Tract

FF1200R17IP5PrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTCPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTCV = 1700VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Traktionsumrichter

FF1200R12IE5PrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTCPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTCV = 1200VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS s

FF1200R12IE5PPrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC / pre-appliedThermal Interface MaterialV = 1200VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumr

/ Technical InformationIGBT-DF120R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses Mechanical Featur

Technische Information / Technical InformationIGBT-ModulFF1200R17KP4_B2IGBT-ModuleIHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeIHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Mittelspannu

Technische Information / Technical InformationIGBT-ModuleFF1200R17KE3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC collector

IXA37IF1200HJVCES = 1200VXPT IGBTI= 58 AC25VCE(sat) = 1.8VCopackPart numberIXA37IF1200HJBackside: isolated2(C)(G) 13(E)Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3600 coefficient of the on-state voltage Solar inverter Industry standard outline

IXA33IF1200HBVCES = 1200VXPT IGBTI= 58 AC25VCE(sat) = 1.8VCopackPart numberIXA33IF1200HBBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

IXA60IF1200NAVCES = 1200VXPT IGBTI= 88 AC25VCE(sat) = 1.8VCopackPart numberIXA60IF1200NABackside: isolatedC(3)(G) 2E(1+4)Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3000 coefficient of the on-state voltage Solar inverter Industry standard

MIXA100PF1200TMHpreliminaryVCES = 2x1200 VXPT IGBT ModuleI= 155 AC25VCE(sat) = 1.8 VPhase leg + free wheeling Diodes + NTCPart numberMIXA100PF1200TMHBackside: isolated87 6 5 42 319Features / Advantages: Applications: Package: High level of integration AC motor drives Housing: MiniPack2 Rugged XPT design (Xtreme light Punch Through) Pumps, Fa

MIXA450PF1200TSFVCES = 2x 1200VXPT IGBT ModuleI= 650AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA450PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pu

MIXA225PF1200TSFpreliminaryVCES = 2x 1200VXPT IGBT ModuleI= 360AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA225PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module re

MIXA300PF1200TSFtentativeVCES = 2x 1200VXPT IGBT ModuleI= 465AC25VCE(sat) = 1.8VPhase leg + free wheeling Diodes + NTCPart numberMIXA300PF1200TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module requ

MIXA225RF1200TSFtentativeVCES = 1200 VXPT IGBT ModuleIC25 = 360 AVCE(sat) = 1.8 VBoost chopper + free wheeling Diodes + NTCPart numberMIXA225RF1200TSF52 1 8 9T43DBoostD10/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one Brake for AC motor drives Industry standard outlinepower semiconductor module r

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

IXA27IF1200HJVCES = 1200VXPT IGBTI= 43 AC25VCE(sat) = 1.8VCopackPart numberIXA27IF1200HJBackside: isolated2(C)(G) 13(E)Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3600 coefficient of the on-state voltage Solar inverter Industry standard outline

IXA12IF1200PBpreliminaryVCES = 1200VXPT IGBTI= 20 AC25VCE(sat) = 1.8VCopackPart numberIXA12IF1200PBBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-220 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant

IXA12IF1200HBpreliminaryIC25 = 20 AXPT IGBTVCES = 1200 VCopackVCE(sat)typ = 1.8 VC (2)Part numberIXA12IF1200HB(G) 1E(3)Features / Advantages: Applications: Package: Easy paralleling due to the positive temperature AC motor drives Housing: TO-247 coefficient of the on-state voltage Solar inverterrIndustry standard outline Rugged XPT design (Xt

IXA12IF1200PCpreliminaryIC25 = 20 AXPT IGBTVCES = 1200 VCopackVCE(sat)typ = 1.8 VC (2)Part numberIXA12IF1200PC(G) 1E(3)Features / Advantages: Applications: Package: Easy paralleling due to the positive temperature AC motor drives Housing: TO-263 (D2Pak) coefficient of the on-state voltage Solar inverterrIndustry standard outline Rugged XPT de

IXA20IF1200HBVCES = 1200VXPT IGBTI= 38 AC25VCE(sat) = 1.8VCopackPart numberIXA20IF1200HBBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

IXA45IF1200HBVCES = 1200VXPT IGBTI= 78 AC25VCE(sat) = 1.8VCopackPart numberIXA45IF1200HBBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-247 Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT de

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

IXA12IF1200TCpreliminaryVCES = 1200VXPT IGBTI= 20 AC25VCE(sat) = 1.8VCopackPart numberIXA12IF1200TCBackside: collector2(C)(G) 13(E)Features / Advantages: Applications: Package: TO-268AA (D3Pak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compl

IXA17IF1200HJVCES = 1200VXPT IGBTI= 28 AC25VCE(sat) = 1.8VCopackPart numberIXA17IF1200HJBackside: isolated2(C)(G) 13(E)Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3600 coefficient of the on-state voltage Solar inverter Industry standard outline

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMC (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM300F120CMS (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 25AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.comELECTRICAL CHARACTERISTICS: OM400F120CMS (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 25AGate Emitter Leakage Current, VGE=+/-1

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.comELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25C unless otherwise specified)Characteristic Symbol Min. Typ. Max Unit OFF CHARACTERISTICSCollector Emitter Breakdown Voltage, VCE=0V VCES 1200 VZero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 2AGate Emitter Leakage Current, VGE=+/-15V

APT20GF120BRD1200V 32AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

APT20GF120KRAPT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCGC Low Tail Current Ultra Low Leakage CurrentE Avala

APT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E

TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDTO-220The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fa

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

APT60GF120JRD1200V 100AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC

APT40GF120JRD1200V 60AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 1200V APT60GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa

APT11GF120KR1200V 22AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

APT33GF120HR1200V 38AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

APT11GF120BRD11200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCEC Low Tail Cu

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa

APT20GF120BRDAPT20GF120SRD1200V 32AFast IGBT & FREDTO-247The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D3PAKPunch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggednessGCand fast switching speed.CEG E Low Forward Voltage Drop High Freq. Switching

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and f

APT50GF120JRD1200V 75AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq

For more information, contact:Collmer Semiconductor, Inc.P.O. Box 702708Dallas, TX 75370972-733-1700972-381-9991 Faxhttp://www.collmer.comThis datasheet has been download from:www.datasheetcatalog.comDatasheets for electronics components.

APT40GF120JRDQ2TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTO

APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

2830 S. Fairview StreetSanta Ana, CA 92704MSAGA11F120DPhone: (714) 979-8220Fast IGBT Die for ImplantableFax: (714) 559-5989Cardio DefibrillatorApplications DESCRIPTION: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.55 Collect

APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

APT4F120S 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, h

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

APT17F120J 1200V, 18A, 0.58 Max, trr 330nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

APT13F120B APT13F120S 1200V, 14A, 1.2 Max trr, 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

APT32F120J 1200V, 33A, 0.32 Max, trr 430nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

PRELIMINARYSFF120-28QSOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-17739.2 AMPS100 VOLTSDESIGNER'S DATA SHEET0.35 QUAD N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast

May 2017 HRF120N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design Reliable and Rugged BVDSS 100 V Advanced Trench Process Technology ID 60 A 100% UIS Tested, 100% Rg Tested RDS(on), typ 10 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter System 8

VBQF1206www.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.0055 at VGS = 4.5V 5820 9.4 nC0.0057 at VGS = 2.5 V 45APPLICATIONS High power density DC/DC Synchronous rectification Embedded DC/DCDFN 3x3 EPD Bottom View Top View Top View1

GPK200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute

GPU100HF120D1 GPU100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =3.2V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applica

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

GPU150HF120D2IGBT Module 1200V/150A 2 in one-package Features 1200V150A,V =3.2V@150A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

GPK100HF120D1GPK100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat

GPU75HF120D1 GPU75HF120D1IGBT Module 1200V/75A 2 in one-package Features 1200V75A,V =3.2V@75A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications

GPU50HF120D1 GPU50HF120D1IGBT Module 1200V/50A 2 in one-package Features 1200V50A,V =3.2V@50A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi

Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame

LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve