F122 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F122
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO53
Búsqueda de reemplazo de F122
F122 Datasheet (PDF)
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Order this documentMOTOROLAby MF122/DSEMICONDUCTOR TECHNICAL DATANPNMJF122Complementary PowerPNPMJF127DarlingtonsFor Isolated Package ApplicationsDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER DARLINGTONS
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS CJF122 NPNCJF127 PNPTO-220FP Fully IsolatedPlastic PackageGeneral Purpose Darlingtons Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 V
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SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
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