All Transistors. F122 Datasheet

 

F122 Datasheet, Equivalent, Cross Reference Search


   Type Designator: F122
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO53

 F122 Transistor Equivalent Substitute - Cross-Reference Search

   

F122 Datasheet (PDF)

 0.1. Size:267K  motorola
mjf122 mjf127.pdf

F122
F122

Order this documentMOTOROLAby MF122/DSEMICONDUCTOR TECHNICAL DATANPNMJF122Complementary PowerPNPMJF127DarlingtonsFor Isolated Package ApplicationsDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER DARLINGTONS

 0.2. Size:170K  fairchild semi
irf120 irf121 irf122 irf123 mtp10n08.pdf

F122
F122

 0.3. Size:144K  cdil
cjf122 7.pdf

F122
F122

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS CJF122 NPNCJF127 PNPTO-220FP Fully IsolatedPlastic PackageGeneral Purpose Darlingtons Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 V

 0.4. Size:388K  silikron
ssf1221j2.pdf

F122
F122

SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc

 0.5. Size:189K  inchange semiconductor
mjf122g.pdf

F122
F122

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for generalpurpose amplifier and switching applications.PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXI

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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