F122 Specs and Replacement
Type Designator: F122
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO53
F122 Substitution
- BJT ⓘ Cross-Reference Search
F122 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS CJF122 NPN CJF127 PNP TO-220FP Fully Isolated Plastic Package General Purpose Darlingtons Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V... See More ⇒
SSF1221J2 Main Product Characteristics VDSS -12V RDS(on) 14.4 m (typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc... See More ⇒
Detailed specifications: F118, F118A, F119, F119A, F120, F120A, F121, F121A, 2SC828, F122A, F123, F123A, F124, F124A, F2, F3, F4
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