F122 Datasheet and Replacement
Type Designator: F122
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO53
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F122 Datasheet (PDF)
mjf122 mjf127.pdf

Order this documentMOTOROLAby MF122/DSEMICONDUCTOR TECHNICAL DATANPNMJF122Complementary PowerPNPMJF127DarlingtonsFor Isolated Package ApplicationsDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER DARLINGTONS
cjf122 7.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS CJF122 NPNCJF127 PNPTO-220FP Fully IsolatedPlastic PackageGeneral Purpose Darlingtons Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 V
ssf1221j2.pdf

SSF1221J2 Main Product Characteristics: VDSS -12V RDS(on) 14.4 m(typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
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History: MMBT4890 | 2N5855 | 2SB1648 | 2SA2039-TL-E | DTL1642 | DTC123TKA | 3DD5G
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History: MMBT4890 | 2N5855 | 2SB1648 | 2SA2039-TL-E | DTL1642 | DTC123TKA | 3DD5G



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