F123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F123
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 35 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO53
Búsqueda de reemplazo de transistor bipolar F123
F123 Datasheet (PDF)
draf123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF123JDRA3123J in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packageP
draf123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF123YDRA3123Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
