FCX596 Todos los transistores

 ..1. Size:705K  nec
 fcx596.pdf

Issue 4 - November 2006 C E C B

 ..2. Size:705K  diodes
 fcx596.pdf

Issue 4 - November 2006 C E C B

 9.1. Size:288K  diodes
 fcx591a.pdf

A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case SOT89 Maximum Continuous Current IC = -1A Case material molded plastic. Green molding compound. Low saturation voltage VCE(sat)

 9.2. Size:432K  diodes
 fcx591.pdf

A Product Line of Diodes Incorporated FCX591 60V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case SOT89 IC = -1A high Continuous Collector Current Case Material Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 RCE(SAT) = 295m for a Low Equivalent On-Resistance Mo

 9.3. Size:447K  diodes
 fcx593.pdf

A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -100V Case SOT89 IC = -1A high Continuous Collector Current Case Material Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 Low saturation voltage VCE(sat)

 9.4. Size:328K  htsemi
 fcx591.pdf

FCX591 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 MARKING P1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -1 A PC Collector Power Dissipation 0

 9.5. Size:283K  lge
 fcx591.pdf

FCX591 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 Power dissipation 0.8 MIN 0.53 0.40 0.48 0.44 MARKING P1 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collecto

 9.6. Size:798K  semtech
 fcx591a.pdf

FCX591A PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Pulse Collector Current -ICM 2 A Base Current -IB 200 mA Total Power Dissipation Ptot 1 W Junction Temperature Tj 150 Storage Temp

 9.7. Size:381K  kexin
 fcx591.pdf

SMD Type Transistors PNP Transistors FCX591 (KCX591) 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5

 9.8. Size:1304K  cn shikues
 fcx591.pdf

FCX591 PNP Medium Power Transistor 500mW 32V 1A 3 MAXIMUM RATINGS 2 1 SOT-89 Unit Parameter Symbol Rating 1 2 Collector 3 Base 2 Emitter Base VCEO 32 V Collector-Emitter Voltage VCBO 40 V Collector-Base Voltage VEBO 5 V Emitter Base Voltage IC 1 A Collector Current Ptot 500 mW Total Device Dissipation(TA=25 )