FCX596 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Issue 4 - November 2006CECB

Issue 4 - November 2006CECB

A Product Line ofDiodes IncorporatedFCX591A40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 Maximum Continuous Current IC = -1A Case material: molded plastic. Green molding compound. Low saturation voltage VCE(sat)

A Product Line ofDiodes IncorporatedFCX59160V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case: SOT89 IC = -1A high Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 RCE(SAT) = 295m for a Low Equivalent On-Resistance Mo

A Product Line ofDiodes IncorporatedFCX593100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -100V Case: SOT89 IC = -1A high Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 Low saturation voltage VCE(sat)

FCX591 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 MARKING:P1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 VVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -1 A PC Collector Power Dissipation 0

FCX591 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.63 1.81.41.4Features2.64.252.43.75 Power dissipation 0.8 MIN0.530.400.480.44MARKING:P1 2x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collecto

FCX591A PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 APeak Pulse Collector Current -ICM 2 ABase Current -IB 200 mATotal Power Dissipation Ptot 1 WJunction Temperature Tj 150 Storage Temp

SMD Type TransistorsPNP TransistorsFCX591 (KCX591)1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5

FCX591PNP Medium Power Transistor 500mW 32V 1A 3MAXIMUM RATINGS 2 1SOT-89 Unit Parameter Symbol Rating 1 2 Collector 3Base 2 Emitter Base VCEO 32 V Collector-Emitter Voltage VCBO 40 V Collector-Base Voltage VEBO 5 V EmitterBase Voltage IC 1 A Collector Current Ptot 500 mW Total Device Dissipation(TA=25)