FCX596 Specs and Replacement
Type Designator: FCX596
SMD Transistor Code: P96
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 220 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
- BJT ⓘ Cross-Reference Search
FCX596 datasheet
9.1. Size:288K diodes
fcx591a.pdf 
A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case SOT89 Maximum Continuous Current IC = -1A Case material molded plastic. Green molding compound. Low saturation voltage VCE(sat) ... See More ⇒
9.2. Size:432K diodes
fcx591.pdf
A Product Line of Diodes Incorporated FCX591 60V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case SOT89 IC = -1A high Continuous Collector Current Case Material Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 RCE(SAT) = 295m for a Low Equivalent On-Resistance Mo... See More ⇒
9.3. Size:447K diodes
fcx593.pdf
A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -100V Case SOT89 IC = -1A high Continuous Collector Current Case Material Molded Plastic. Green Molding Compound ICM = -2A Peak Collector Current UL Flammability Rating 94V-0 Low saturation voltage VCE(sat) ... See More ⇒
9.4. Size:328K htsemi
fcx591.pdf
FCX591 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 MARKING P1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -1 A PC Collector Power Dissipation 0... See More ⇒
9.5. Size:283K lge
fcx591.pdf
FCX591 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 Power dissipation 0.8 MIN 0.53 0.40 0.48 0.44 MARKING P1 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collecto... See More ⇒
9.6. Size:798K semtech
fcx591a.pdf
FCX591A PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Pulse Collector Current -ICM 2 A Base Current -IB 200 mA Total Power Dissipation Ptot 1 W Junction Temperature Tj 150 Storage Temp... See More ⇒
9.7. Size:381K kexin
fcx591.pdf
SMD Type Transistors PNP Transistors FCX591 (KCX591) 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 ... See More ⇒
9.8. Size:1304K cn shikues
fcx591.pdf
FCX591 PNP Medium Power Transistor 500mW 32V 1A 3 MAXIMUM RATINGS 2 1 SOT-89 Unit Parameter Symbol Rating 1 2 Collector 3 Base 2 Emitter Base VCEO 32 V Collector-Emitter Voltage VCBO 40 V Collector-Base Voltage VEBO 5 V Emitter Base Voltage IC 1 A Collector Current Ptot 500 mW Total Device Dissipation(TA=25 ) ... See More ⇒
Detailed specifications: FCX491A, FCX495, FCX5401, FCX5550, FCX558, FCX589, FCX591, FCX591A, BD333, FCX604, FCX649, FCX653, FCX704, FCX749, FCX753, FD-1029GM, FD-1029JN
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