2N3660 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3660
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25 MHz
Capacitancia de salida (Cc): 275 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO5
Búsqueda de reemplazo de 2N3660
2N3660 datasheet
2n3663.pdf
2N3663 B TO-92 C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V V Collector-Base Voltage 30 V CBO ... See More ⇒
2n3665.pdf
2N3665 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1.0A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒
2n3667.pdf
isc Silicon NPN Power Transistor 2N3667 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
Otros transistores... 2N3644 , 2N3645 , 2N3646 , 2N3647 , 2N3648 , 2N365 , 2N3659 , 2N366 , 2SC1815 , 2N3661 , 2N3662 , 2N3663 , 2N3664 , 2N3665 , 2N3666 , 2N3667 , 2N367 .
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