2N3665 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3665 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 60 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO5
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2N3665 datasheet
2n3665.pdf
2N3665 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1.0A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
2n3663.pdf
2N3663 B TO-92 C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V V Collector-Base Voltage 30 V CBO
2n3667.pdf
isc Silicon NPN Power Transistor 2N3667 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
Otros transistores... 2N365, 2N3659, 2N366, 2N3660, 2N3661, 2N3662, 2N3663, 2N3664, BC546, 2N3666, 2N3667, 2N367, 2N3671, 2N3672, 2N3673, 2N3675, 2N3676
Parámetros del transistor bipolar y su interrelación.
History: DXT5616U | KRC242M | BFV57 | 2N3584X | BC341-6 | BFX85 | T1328
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