FMMT495 Todos los transistores

 ..1. Size:480K  diodes
 fmmt495.pdf

FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020

 ..2. Size:426K  jiangsu
 fmmt495.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN) SOT-23 FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up 1. BASE For general amplification 2. EMITTER 3. COLLECTOR MARKING 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B

 8.1. Size:493K  diodes
 fmmt491a.pdf

FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case SOT23 Case Material Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity Level 1 per J-STD-020 RCE(sat) = 195m for a

 8.2. Size:359K  diodes
 fmmt491q.pdf

FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT23 stringent requirements of automotive applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Feature Term

 8.3. Size:380K  diodes
 fmmt494.pdf

FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 120V Case SOT23 (Type DN) IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD

 8.4. Size:158K  diodes
 fmmt497.pdf

FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5V Continuous collector current IC 500 mA Peak pulse current ICM 1A

 8.5. Size:379K  diodes
 fmmt493.pdf

A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 100V Case SOT23 IC = 1A High Continuous Collector Current Case material Molded Plastic. Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 p

 8.6. Size:512K  diodes
 fmmt493a.pdf

FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. VCE(SAT)= 0.5V @1A UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Low Saturation Vol

 8.7. Size:387K  diodes
 fmmt491.pdf

A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance

 8.8. Size:472K  mcc
 fmmt491.pdf

 8.9. Size:799K  jiangsu
 fmmt493.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT493 TRANSISTOR (NPN) SOT 23 FEATURES Complementary Type FMMT593 MARKING 493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO 3. COLLECTOR V Collector-Emitter Voltage 100 V CEO

 8.10. Size:708K  jiangsu
 ad-fmmt491.pdf

www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING 491 MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBO Collector-emitter vo

 8.11. Size:3320K  jiangsu
 fmmt491.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking 491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba

 8.12. Size:387K  htsemi
 fmmt493.pdf

FMMT493 TRANSISTOR (NPN) SOT 23 FEATURES Complementary Type FMMT593 MARKING 493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO 3. COLLECTOR V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1000 mA C PC Collector Power Dissipation 2

 8.13. Size:613K  htsemi
 fmmt491.pdf

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking 491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW

 8.14. Size:199K  lge
 fmmt491.pdf

FMMT491 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking 491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

 8.15. Size:379K  wietron
 fmmt491.pdf

FMMT491 COLLECTOR 3 General Purpose Transistor NPN Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO 60 V Collector-Emitter Breakdown Voltage V(BR)CBO 80 V Emitter-Base Breakdown Voltage V(BR)EBO V 5.0 Collector Current IC A 1.0 Peak Pulse Current ICm A 2.0 Power Dissipat

 8.16. Size:487K  first silicon
 fmmt491.pdf

SEMICONDUCTOR FMMT491 TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3 Marking 491 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT 23 V Collector-Emitter Voltage 60 V CEO VEBO Emitter-Base Voltage 5 V COLLECTOR IC Collector Current 1 A 3 ICM Peak Pulse Current

 8.17. Size:780K  kexin
 fmmt493.pdf

SMD Type Transistors NPN Transistors FMMT493 (KMMT493) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=1A 1 2 Collector Emitter Voltage VCEO=100V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to FMMT593 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 8.18. Size:1401K  kexin
 fmmt491.pdf

SMD Type Transistors NPN Transistors FMMT491 (KMMT491) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 C 1.Base 2.Emitter B 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 8.19. Size:1637K  slkor
 fmmt493.pdf

FMMT493 Features SOT-23 For switching and AF amplifier applications. As complementary type of the PNP transistor FMMT593 is recommended. 1.Base 2.Emitter 3.Collector Marking 493 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 120 V CBO Collector Emitter Voltage V 100 V CEO E

 8.20. Size:1576K  slkor
 fmmt491.pdf

FMMT491 NPN Silicon Epitaxial Planar Transistor Features SOT-23 Low equivalent on-resistance Be complementaty with FMMT591 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 80 V CBO Collector Emitter Voltage V 60 V CEO Emitter Base Voltage V 5 V

 8.21. Size:1634K  pjsemi
 fmmt493.pdf

FMMT493 NPN Transistor Features For switching and AF amplifier applications. SOT-23 (TO-236) As complementary type of the PNP transistor FMMT593 is recommended. 1.Base 2.Emitter 3.Collector Marking 493 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 120 V CBO Collector Em

 8.22. Size:1235K  pjsemi
 fmmt491.pdf

FMMT491 NPN Transistor Features Low equivalent on-resistance SOT-23 (TO-236) Be complementaty with FMMT591 1.Base 2.Emitter 3.Collector Marking 491 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 80 V CBO Collector Emitter Voltage V 60 V CEO Emitter Base Voltage V 5 V

 8.23. Size:537K  cn shikues
 fmmt491.pdf

 8.24. Size:976K  cn yfw
 fmmt491.pdf