FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN)SOT-23FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up1. BASE For general amplification2. EMITTER3. COLLECTORMARKING: 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-B

FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case: SOT23 Case Material: Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 RCE(sat) = 195m for a

FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature Term

FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 120V Case: SOT23 (Type DN) IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD

FMMT497SOT23 NPN silicon planar high voltage high performance transistorComplementary part number - FMMT597CDevice marking - 497BEECBPinout - top viewAbsolute maximum ratingsParameter Symbol Value UnitCollector-base voltage VCBO 300 VCollector-emitter voltage VCEO 300 VEmitter-base voltage VEBO 5VContinuous collector current IC 500 mAPeak pulse current ICM 1A

A Product Line ofDiodes IncorporatedFMMT493100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 100V Case: SOT23 IC = 1A High Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 p

FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. VCE(SAT)= 0.5V @1A UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Vol

A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance

FMMT491Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Planar Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSHigh PerformanceCompliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT493 TRANSISTOR (NPN) SOT23 FEATURES Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO3. COLLECTOR V Collector-Emitter Voltage 100 V CEO

www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 491 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBOCollector-emitter vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba

FMMT493 TRANSISTOR (NPN) SOT23 FEATURES Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO3. COLLECTOR V Collector-Emitter Voltage 100 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 1000 mA CPC Collector Power Dissipation 2

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW

FMMT491 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

FMMT491COLLECTOR3General Purpose Transistor NPN Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO 60 VCollector-Emitter Breakdown VoltageV(BR)CBO 80 VEmitter-Base Breakdown VoltageV(BR)EBOV 5.0Collector Current IC A 1.0Peak Pulse Current ICmA 2.0Power Dissipat

SEMICONDUCTORFMMT491TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3Marking :491 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT23V Collector-Emitter Voltage 60 V CEOVEBO Emitter-Base Voltage 5 V COLLECTORIC Collector Current 1 A 3ICM Peak Pulse Current

SMD Type TransistorsNPN TransistorsFMMT493 (KMMT493)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A1 2 Collector Emitter Voltage VCEO=100V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to FMMT5931.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN TransistorsFMMT491 (KMMT491)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1C1.Base2.EmitterB3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

FMMT493Features SOT-23 For switching and AF amplifier applications. As complementary type of the PNP transistorFMMT593 is recommended.1.Base 2.Emitter 3.CollectorMarking:493Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 120 V CBOCollector Emitter Voltage V 100 V CEOE

FMMT491NPN Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT493 NPN Transistor Features For switching and AF amplifier applications.SOT-23 (TO-236) As complementary type of the PNP transistorFMMT593 is recommended.1.Base 2.Emitter 3.CollectorMarking:493Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 120 V CBOCollector Em

FMMT491NPN Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorMarking: 491Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V

FMMT491TRANSISTOR (NPN) SOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 4 9 1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150