2N3700UB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3700UB 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 190 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: LCC3
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2N3700UB datasheet
2n3700hr.pdf
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2n3700.pdf
2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratin
2n3700 2n3701.pdf
DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25 C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V
2n3700 01.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @
Otros transistores... 2N3692, 2N3693, 2N3694, 2N37, 2N370, 2N3700, 2N3700CSM, 2N3700DCSM, BC549, 2N3701, 2N3702, 2N3703, 2N370-33, 2N3704, 2N3705, 2N3706, 2N3707
Parámetros del transistor bipolar y su interrelación.
History: KRA762E | 2SC3434
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