FT107B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FT107B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 260 MHz

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 2000

Encapsulados: TO18

 Búsqueda de reemplazo de FT107B

- Selecciónⓘ de transistores por parámetros

 

FT107B datasheet

 9.1. Size:118K  motorola
 mmft107t1rev3x.pdf pdf_icon

FT107B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT107T1/D MMFT107T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode Silicon Gate TMOS MEDIUM POWER TMOS FET SOT 223 for Surface Mount 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX This TMOS medium power field effect transistor is designed for high speed, low loss power switchi

 9.2. Size:78K  onsemi
 mmft107t1.pdf pdf_icon

FT107B

MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N Channel SOT 223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, http //onsemi.com solenoid and relay drivers. The device is housed in the SOT 223 package which is designed for medium power surface mount 250 mA applications. 200 VOLTS

Otros transistores... FT023, FT024, FT025, FT026, FT027, FT052, FT053, FT107A, 2SC2383, FT107C, FT118, FT1210, FT123, FT1310, FT1315, FT1324, FT1324B