All Transistors. FT107B Datasheet

 

FT107B Datasheet and Replacement


   Type Designator: FT107B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO18
 

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FT107B Datasheet (PDF)

 9.1. Size:118K  motorola
 mmft107t1rev3x.pdf pdf_icon

FT107B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

 9.2. Size:78K  onsemi
 mmft107t1.pdf pdf_icon

FT107B

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

Datasheet: FT023 , FT024 , FT025 , FT026 , FT027 , FT052 , FT053 , FT107A , 2SC828 , FT107C , FT118 , FT1210 , FT123 , FT1310 , FT1315 , FT1324 , FT1324B .

History: 2SB503 | KT8127V | EN4126 | KT698B | BFG135 | MM8006 | 2SA462

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