FT107B Specs and Replacement

Type Designator: FT107B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO18

 FT107B Substitution

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FT107B datasheet

 9.1. Size:118K  motorola

 mmft107t1rev3x.pdf pdf_icon

FT107B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT107T1/D MMFT107T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode Silicon Gate TMOS MEDIUM POWER TMOS FET SOT 223 for Surface Mount 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX This TMOS medium power field effect transistor is designed for high speed, low loss power switchi... See More ⇒

 9.2. Size:78K  onsemi

 mmft107t1.pdf pdf_icon

FT107B

MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N Channel SOT 223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, http //onsemi.com solenoid and relay drivers. The device is housed in the SOT 223 package which is designed for medium power surface mount 250 mA applications. 200 VOLTS... See More ⇒

Detailed specifications: FT023, FT024, FT025, FT026, FT027, FT052, FT053, FT107A, 2SC2383, FT107C, FT118, FT1210, FT123, FT1310, FT1315, FT1324, FT1324B

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