FT107B Datasheet, Equivalent, Cross Reference Search
Type Designator: FT107B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 260 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO18
FT107B Transistor Equivalent Substitute - Cross-Reference Search
FT107B Datasheet (PDF)
mmft107t1rev3x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi
mmft107t1.pdf
MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
