FT107C Todos los transistores

 

FT107C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FT107C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 280 MHz
   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO18

 Búsqueda de reemplazo de transistor bipolar FT107C

 

FT107C Datasheet (PDF)

 9.1. Size:118K  motorola
 mmft107t1rev3x.pdf

FT107C FT107C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

 9.2. Size:78K  onsemi
 mmft107t1.pdf

FT107C FT107C

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

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