2N3701 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V

2N3700HRHi-Rel 80 V, 1 A NPN transistorDatasheet - production dataFeatures 1BVCEO 80 V23IC(max) 1 A33 TO-184HFE at 10 V - 150 mA >1001122 LCC-3UB Hermetic packagesPin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rateFigure 1. Internal schematic diagram DescriptionThe 2N3700HR is a NPN tr

2N3700General purpose amplifiersDescriptionThe 2N3700 is silicon planar epitaxial NPNtransistor in Jedec TO-18 metal case. It isintended for small signal, low noise industrialapplications.TO-18Internal schematic diagramOrder codesPart Number Marking Package Packing2N3700 2N3700 TO-18 BagNovember 2006 Rev 2 1/7www.st.com 7Electrical ratings 2N37001 Electrical ratin

2N3703PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO

2N3702PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co

2N3704NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic Package2N37022N3703PNP SILICON PLANAR EPITAXIAL TRANSISTORSDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.1 2 31 = EMITTER2 = COLLECTOR3 = BASEABSOLUTE MAXI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705TO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEAmplifier TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL 2N3704 2N3705 UNITVCEOCollector Emitter Voltage 30 VCollector Base

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N37002N3701TO-18General purpose amplifierABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 140 VCollector -Emitter Voltage VCEO 80 VEmitter -Base Voltage VEBO 7.0 VCollector Current IC 1.0 APower Dissipation @

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector