FT2955 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FT2955

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 55 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

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FT2955 datasheet

 0.1. Size:248K  motorola
 mmft2955e.pdf pdf_icon

FT2955

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2955E/D Medium Power Field Effect Transistor MMFT2955E P Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount TMOS MEDIUM POWER FET This advanced E FET is a TMOS medium power MOSFET 1.2 AMP designed to withstand high energy in the avalanche and commuta- 60 VOLT

 0.2. Size:178K  motorola
 mmft2955erev4.pdf pdf_icon

FT2955

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2955E/D Medium Power Field Effect Transistor MMFT2955E P Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount TMOS MEDIUM POWER FET This advanced E FET is a TMOS medium power MOSFET 1.2 AMP designed to withstand high energy in the avalanche and commuta- 60 VOLT

 0.3. Size:113K  onsemi
 mmft2955et1.pdf pdf_icon

FT2955

MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P Channel SOT 223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device http //onsemi.com also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power 1 AMPERE supplies, convert

Otros transistores... FT1724, FT1725, FT1746, FT2368, FT2369, FT2383, FT2384, FT2551, C5198, FT2974, FT2975, FT2978, FT2979, FT2995, FT3055, FT317, FT317A