All Transistors. FT2955 Datasheet

 

FT2955 Datasheet and Replacement


   Type Designator: FT2955
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 55 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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FT2955 Datasheet (PDF)

 0.1. Size:248K  motorola
 mmft2955e.pdf pdf_icon

FT2955

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

 0.2. Size:178K  motorola
 mmft2955erev4.pdf pdf_icon

FT2955

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

 0.3. Size:113K  onsemi
 mmft2955et1.pdf pdf_icon

FT2955

MMFT2955EPreferred DevicePower MOSFET1 Amp, 60 VoltsPChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This new energy efficient devicehttp://onsemi.comalso offers a draintosource diode with a fast recovery time.Designed for low voltage, high speed switching applications in power1 AMPEREsupplies, convert

Datasheet: FT1724 , FT1725 , FT1746 , FT2368 , FT2369 , FT2383 , FT2384 , FT2551 , 13007 , FT2974 , FT2975 , FT2978 , FT2979 , FT2995 , FT3055 , FT317 , FT317A .

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