FT3906
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FT3906
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar FT3906
FT3906
Datasheet (PDF)
0.1. Size:1278K alfa-mos
aft3906.pdf 
AFT3906 Alfa-MOS Technology PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100mA. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless
0.2. Size:454K silikron
ssft3906.pdf
SSFT3906Main Product Characteristics: VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.)ID 90A TO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
9.1. Size:1374K alfa-mos
aft3904.pdf
AFT3904 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA A
9.2. Size:719K silikron
ssft3904u.pdf
SSFT3904U Main Product Characteristics: VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw
9.3. Size:759K silikron
ssft3904.pdf
SSFT3904 Main Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
9.4. Size:521K silikron
ssft3904j7-hf.pdf
SSFT3904J7-HFMain Product Characteristics: VDSS 30V RDS(on) 3m (typ.) ID 120APQFN5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem
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